型号 功能描述 生产厂家 企业 LOGO 操作
NTD20N06G

Power MOSFET

Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total

ONSEMI

安森美半导体

NTD20N06G

N-Channel 60-V (D-S) MOSFET

文件:897.01 Kbytes Page:6 Pages

VBSEMI

微碧半导体

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

UMW

友台半导体

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

EVVOSEMI

翊欧

N-Channel 60-V (D-S) MOSFET

文件:897.38 Kbytes Page:6 Pages

VBSEMI

微碧半导体

Fast Switching

文件:67.37 Kbytes Page:2 Pages

ISC

无锡固电

20A mps,60 Volts N-CHANNEL MOSFET

文件:193.72 Kbytes Page:2 Pages

CHONGQING

平伟实业

NTD20N06G产品属性

  • 类型

    描述

  • 型号

    NTD20N06G

  • 功能描述

    MOSFET 60V 20A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
NA/
5250
原厂直销,现货供应,账期支持!
ON
22+
TO-252
3000
原装正品,支持实单
ON
24+
DPAK4LEADSingleG
8866
ON/安森美
25+
TO-252
2000
全新原装正品支持含税
ONS
23+
DPAK
7000
ON/安森美
2447
DPAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON
07+
TO-252
259
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
NK/南科功率
2025+
DPAK-3
986966
国产
ONSEMI/安森美
2511
DPAK-3
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价

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