isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 P 沟道功率 MOSFET -60V，-15.5A，150mΩ

Power MOSFET -60 V, -15.5A, Single P-Channel DPAK • Withstands High Energy in Avalanche and Commutation Modes\n• Low Gate Charge for Fast Switching\n• RoHS Compliant;

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：156.59 Kbytes Page：7 Pages

Power MOSFET

文件：140.45 Kbytes Page：7 Pages

Power MOSFET

文件：93.13 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

Power MOSFET

文件：93.13 Kbytes Page：7 Pages

P-Channel 60-V (D-S) MOSFET

文件：939.17 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages

P-Channel 60-V (D-S) MOSFET

文件：939.09 Kbytes Page：7 Pages

丝印代码：T20P06LG；Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages

丝印代码：T20P06LG；Power MOSFET

文件：93.13 Kbytes Page：7 Pages

P-Channel 60-V (D-S) MOSFET

文件：985.58 Kbytes Page：8 Pages

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages

Power MOSFET

文件：93.13 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages

P-Channel 60-V (D-S) MOSFET

文件：985.6 Kbytes Page：8 Pages

TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini