NTD20P06L价格

参考价格:¥1.1679

型号:NTD20P06LG 品牌:ON Semiconductor 备注:这里有NTD20P06L多少钱,2025年最近7天走势,今日出价,今日竞价,NTD20P06L批发/采购报价,NTD20P06L行情走势销售排行榜,NTD20P06L报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NTD20P06L

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD20P06L

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件:119.94 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTD20P06L

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件:156.59 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTD20P06L

Power MOSFET

文件:140.45 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTD20P06L

Power MOSFET

文件:93.13 Kbytes Page:7 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

Bychip

百域芯

Power MOSFET

文件:93.13 Kbytes Page:7 Pages

ONSEMI

安森美半导体

P-Channel 60-V (D-S) MOSFET

文件:939.17 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件:119.94 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件:119.94 Kbytes Page:7 Pages

ONSEMI

安森美半导体

P-Channel 60-V (D-S) MOSFET

文件:939.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

P-Channel 60-V (D-S) MOSFET

文件:985.58 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件:119.94 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:93.13 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件:119.94 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件:119.94 Kbytes Page:7 Pages

ONSEMI

安森美半导体

P-Channel 60-V (D-S) MOSFET

文件:985.6 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:93.13 Kbytes Page:7 Pages

ONSEMI

安森美半导体

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -14A, RDS(ON) =125mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =175mW @VGS = -4.5V. Lead free product is acquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

P-Channel 60-V (D-S) MOSFET

文件:988.36 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

文件:441.65 Kbytes Page:4 Pages

CET

华瑞

NTD20P06L产品属性

  • 类型

    描述

  • 型号

    NTD20P06L

  • 功能描述

    MOSFET -60V -15.5A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-17 17:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
ON(安森美)
24+
TO-252-3
23048
原厂可订货,技术支持,直接渠道。可签保供合同
ON/安森美
22+
TO-252
8000
原装正品现货假一罚十
ON
25+
TO-252
6000
全新原装现货、诚信经营!
ON
21+
8080
只做原装,质量保证
ON/安森美
24+
5000
只做原厂渠道 可追溯货源
ON/安森美
23+
SOT-252
24190
原装正品代理渠道价格优势
ON(安森美)
23+
标准封装
8000
正规渠道,只有原装!
ON
24+
45000
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品

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