NP90N04VDG-E1-AY参数引脚图原装现货专卖瑞萨-IC资料网

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型号	功能描述	生产厂家&企业	LOGO
NP90N04VDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra	RENESAS 瑞萨	RENESAS
NP90N04VDG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VDG-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra	RENESAS 瑞萨	RENESAS
NP90N04VDG-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra	RENESAS 瑞萨	RENESAS
NP90N04VDK	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VDK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VDK-E1-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VDK-E2-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VLG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VLK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VLK	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3800 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VLK-E1-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3800 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VLK-E2-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3800 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VUG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VUK	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a	RENESAS 瑞萨	RENESAS
NP90N04VUK_V01	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a	RENESAS 瑞萨	RENESAS
NP90N04VUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a	RENESAS 瑞萨	RENESAS
NP90N04VDG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VDK	N-Channel MOSFET uses advanced SGT technology 文件：2.30948 Mbytes Page：6 Pages	DOINGTER 杜因特	DOINGTER
NP90N04VDK_15	40 V ??90 A ??N-channel Power MOS FET Application: Automotive 文件：114.64 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP90N04VLG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VLK_15	40 V ??90 A ??N-channel Power MOS FET Application: Automotive 文件：300.91 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUG	N-Channel MOSFET uses advanced trench technology 文件：1.32816 Mbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
NP90N04VUG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：318.83 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUG-E1-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：318.83 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUG-E2-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：318.83 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUK_15	MOS FIELD EFFECT TRANSISTOR 文件：123.33 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP90N04MDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04MDH	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
HM90N04D	N-Channel Enhancement Mode Power MOSFET 文件：439.98 Kbytes Page：6 Pages	HMSEMI 华之美半导体	HMSEMI
HMS90N04D	N-Channel Super Trench Power MOSFET 文件：409.07 Kbytes Page：5 Pages	HMSEMI 华之美半导体	HMSEMI
NDT90N04	N-Channel Trench Power MOSFET 文件：255.37 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN

NP90N04V产品属性

类型
描述
型号
NP90N04V
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
MOS FIELD EFFECT TRANSISTOR

NP90N04V供应商更多...

更新时间：2025-8-14 18:24:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	NP90N04VDK	RENESAS/瑞萨	22+	TO-252	12500	瑞萨全系列在售,终端可出样品	询价
深圳市科恒伟业电子有限公司	NP90N04VDK-E1-AY	RENESAS/瑞萨	24+	TO252	8540	只做原装正品现货或订货假一赔十!	询价
深圳市润联芯城科技有限公司	NP90N04VDK-E1-AY	RENESAS/瑞萨	22+	TO-252	7500	原装正品支持实单	询价
深圳市高捷芯城科技有限公司	NP90N04VDG-E1-AY	RENESAS(瑞萨)/IDT	24+	TO252	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市正纳电子有限公司	NP90N04VDK-E1-AY	Renesas(瑞萨)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市创新迹电子有限公司	NP90N04VDG-E1-AY	NEC	22+	SOT252	25000	只做原装进口现货,专注配单	询价
贸泽芯城（深圳）电子科技有限公司	NP90N04VLG	-	23+	NA	33000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市芯皇电子有限公司	NP90N04VDK	RENESAS/瑞萨	22+	TO-252	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
京海半导体(深圳)有限公司	NP90N04VDG-E1-AY	VB	21+	TO-252	10000	原装现货假一罚十	询价
深圳市安富世纪电子有限公司	NP90N04VDG-E1-AY	NEC	23+	SOT252	8000	只做原装现货	询价

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深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
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NP90N04V产品属性

NP90N04V供应商更多...

NP90N04V芯片相关品牌

NP90N04V规格书下载地址

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NP90N04V数据表相关新闻

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