DESCRIPTION

The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Logic level

• Super low on-state resistance

RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A)

RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

• High current rating

ID(DC) = ±90 A

• Low input capacitance

Ciss = 4600 pF TYP.

• Designed for automotive application and AEC-Q101 qualified