isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra

MOS FIELD EFFECT TRANSISTOR

Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a

丝印代码：HM90N04D；N-Channel Enhancement Mode Power MOSFET

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丝印代码：HMS90N04D；N-Channel Super Trench Power MOSFET

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