Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GH

封装/外壳：NI-360HF 包装：散装 描述：FET RF 15V 3.55GHZ NI360HF 分立半导体产品 晶体管 - FET，MOSFET - 射频

Gallium Arsenide PHEMT

3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, I

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical Single-Carrier W-CDMA Per

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

Gallium Arsenide PHEMT

3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180

RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

Gallium Arsenide PHEMT RF Power Field Effect Transistor

3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

Gallium Arsenide PHEMT RF Power Field Effect Transistor

GaAs pHEMT Power FET, 500-5000 MHz, 9 W, 12 V

Gallium Arsenide pHEMT RF Power Field Effect Transistor

Gallium Arsenide pHEMT RF Power Field Effect Transistor

封装/外壳：PLD-1.5 包装：托盘 描述：FET RF 15V 3.55GHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频

Gallium Arsenide PHEMT RF Power Field Effect Transistor

FET RF 15V 3.55GHZ NI360HF

3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT

22 (7/30) AWG Tinned Copper

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MULTI-PORT Double-Sided Entry.

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MULTI-PORT Double-Sided Entry.

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MOUNTING VERSION; MULTI-PORTDouble-Sided Entry.

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MOUNTING VERSION; MULTI-PORTDouble-Sided Entry.

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