RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

封装/外壳：PLD-1.5 包装：卷带（TR） 描述：FET RF 15V 3.55GHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT

封装/外壳：PLD-1.5 包装：卷带（TR） 描述：FET RF 15V 3.55GHZ 1.5-PLD 分立半导体产品 晶体管 - FET，MOSFET - 射频

22 (7/30) AWG Tinned Copper

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MULTI-PORT Double-Sided Entry.

文件：262.28 Kbytes Page：2 Pages

MULTI-PORT Double-Sided Entry.

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MOUNTING VERSION; MULTI-PORTDouble-Sided Entry.

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MOUNTING VERSION; MULTI-PORTDouble-Sided Entry.

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