Gallium Arsenide PHEMT RF Power Field Effect Transistor

Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.

• Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts,

IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

@ 0.01 Probability)

Output Power — 1 Watt

Power Gain — 10 dB

Efficiency — 30

• 10 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity