MULTI-PORT Double-Sided Entry.

文件：259.45 Kbytes Page：2 Pages

MOUNTING VERSION; MULTI-PORTDouble-Sided Entry.

文件：260.519 Kbytes Page：2 Pages

MULTI-PORT Double-Sided Entry.

文件：262.28 Kbytes Page：2 Pages

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GH

RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

Mini Audio Transformers

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