3.5GHZ 10W GAAS NI360HF

Gallium Arsenide PHEMT RF Power Field Effect Transistor

GaAs pHEMT Power FET, 500-5000 MHz, 9 W, 12 V

Gallium Arsenide PHEMT

3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, I

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical Single-Carrier W-CDMA Per

Gallium Arsenide pHEMT RF Power Field Effect Transistor

Gallium Arsenide pHEMT RF Power Field Effect Transistor

封装/外壳：PLD-1.5 包装：托盘 描述：FET RF 15V 3.55GHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-360HF 包装：卷带（TR） 描述：FET RF 15V 3.55GHZ NI360HF 分立半导体产品 晶体管 - FET，MOSFET - 射频

Gallium Arsenide PHEMT RF Power Field Effect Transistor

FET RF 15V 3.55GHZ NI360HF

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GH

RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

MULTI-PORT Double-Sided Entry.

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MULTI-PORT Double-Sided Entry.

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Mini Audio Transformers

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