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MRF4晶体管资料
MRF401别名：MRF401三极管、MRF401晶体管、MRF401晶体三极管
MRF401生产厂家：美国摩托罗拉半导体公司
MRF401制作材料：Si-NPN
MRF401性质：调幅 （AM）_功率放大 （L）
MRF401封装形式：贴片封装
MRF401极限工作电压：30V
MRF401最大电流允许值：3.3A
MRF401最大工作频率：30MHZ
MRF401引脚数：4
MRF401最大耗散功率：25W
MRF401放大倍数：
MRF401图片代号：G-127
MRF401vtest：30
MRF401htest：30000000
- MRF401atest：3.3
MRF401wtest：25
MRF401代换 MRF401用什么型号代替：BLX13,BLY93A,3DA30D,
MRF4价格
参考价格：￥49.0490
型号：MRF403 品牌：NKK 备注：这里有MRF4多少钱，2025年最近7天走势，今日出价，今日竞价，MRF4批发/采购报价，MRF4行情走势销售排行榜，MRF4报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF4 | Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. |  |   |
MRF4 | TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES 文件：1.37879 Mbytes Page：4 Pages | bel Bel Fuse Inc. | | |
Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | | | |
NPN SILICON RF POWER TRANSISTORS 25WPEP-30MHzRFPOWERTRANSISTORNPNSILICON | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheMRF406isDesignedfor12.5V30MHzPowerAmplifierApplications. FEATURESINCLUDE: •CommonEmitter •OutputPower=20W(PEP) | ASI Advanced Semiconductor |  | | |
12.5V 30MHz Power Amplifier FEATURESINCLUDE: •CommonEmitter •OutputPower=20W(PEP) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
RF POWER TRANSISTOR
| MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
RF POWER TRANSISTORS NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. •Specified12.5Volt,30MHzCharacteristics— OutputPower=100W(PEP) MinimumGain=10dB Efficiency=40 •IntermodulationDistortion@ | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
The RF Line NPN Silicon RF Power Transistor TheRFLineNPNSiliconRFPowerTransistor Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. •Specified12.5Volt,30MHzCharacteristics— OutputPower=100W(PEP) MinimumGain=10dB Efficiency=40 •IntermodulationDistortion@100W(P | MACOMTyco Electronics 玛科姆技术方案控股有限公司 |  | | |
The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V TheRFLineNPNSiliconPowerTransistor 100W(PEP),30MHz,28V Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. •Specified12.5V,30MHzcharacteristics— Outputpower=100W(PEP) Minimumgain=10dB Efficiency=40 •Intermodulationdist | MA-COM M/A-COM Technology Solutions, Inc. |  | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF421isDesignedforHighlinearamplifierapplicationsfrom2.0to30MHZ. FEATURES: •PG=12dBmin.at100W/30MHz •IMD3=-30dBcmax.at100W(PEP) •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz Designedprimarilyforapplicationasahigh-powerlinearamplifierfrom2.0to30MHz. ●Specified12.5V,30MHzcharacteristics— Outputpower=100W(PEP) Minimumgain=10dB Efficiency=40 ●Intermodulationdistortion@100W(PEP)—IMD=-30dB(min.) ●100testedforload | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
NPN Silicon RF Power Transistor TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationasahigh–powerlinearamplifierfrom2.0to30MHz. •Specified12.5Volt,30MHzCharacteristics— OutputPower=100W(PEP) MinimumGain=10dB Efficiency=40 •IntermodulationDistortion@ | ELEFLOW eleflow technologies co., ltd. |  | | |
NPN Silicon RF power transistor Description: MRF422isdesignedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. Features: Specified28Volt,30MHzCharacteristics OutputPower=150W(PEP),MinimumGain=10dB,Efficiency=40 IntermodulationDistortion@150W(PEP),IMD=–30d | ELEFLOW eleflow technologies co., ltd. | | | |
RF POWER TRANSISTORS NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. •Specified28Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=10dB Efficiency=40 •IntermodulationDistortion@150W(P | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF422isDesignedfor2.0MHzto30MHz,28VHighPowerLinearAmplifierApplications.ForhFEMatchedPairsOrderASIMRF422MP. | ASI Advanced Semiconductor | | | |
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. •Specified28V,30MHzcharacteristics— Outputpower=150W(PEP) Minimumgain=10dB Efficiency=40 •Intermodulationdistortion@150W(PEP)—IMD=–30dB(min.) •100testedforloadm | MA-COM M/A-COM Technology Solutions, Inc. | | | |
The RF Line NPN Silicon RF Power Transistor TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz. •Specified28Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=10dB Efficiency=40 •IntermodulationDistortion@150W(P | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF422isDesignedfor2.0MHzto30MHz,28VHighPowerLinearAmplifierApplications.ForhFEMatchedPairsOrderASIMRF422MP. | ASI Advanced Semiconductor | | | |
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor ...designedforhighgaindriverandoutputlinearamplifierstagesin1.5to30MHzHF/SSBequipment. •Specified28Volt,30MHzCharacteristics— OutputPower=25W(PEP) MinimumGain=22dB Efficiency=35 •IntermodulationDisto | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
The RF Line NPN Silicon RF Power Transistor TheRFLine NPNSiliconRFPowerTransistor ...designedforhighgaindriverandoutputlinearamplifierstagesin1.5to30MHzHF/SSBequipment. •Specified28Volt,30MHzCharacteristics— OutputPower=25W(PEP) MinimumGain=22dB Efficiency=35 •IntermodulationDisto | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | | |
The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V Designedforhighgaindriverandoutputlinearamplifierstagesin1.5to30MHzHF/SSBequipment. •Specified28V,30MHzcharacteristics— Outputpower=25W(PEP) Minimumgain=22dB Efficiency=35 •Intermodulationdistortion@25W(PEP)—IMD=–30dB(max) •100testedfo | MA-COM M/A-COM Technology Solutions, Inc. | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF426isDesignedforhighgainamplifierapplicationsupto30MHz. FEATURES: •PG=22dBmin.at25W/30MHz •IMD3=-30dBcmax.at25W(PEP) •Omnigold™MetalizationSystem •Availableasmatchedpairs. | ASI Advanced Semiconductor | | | |
NPN Silicon RF power transistor Description: MRF426isdesignedprimarilyforhighgaindriverandoutputlinearamplifierstagesin1.5to30MHzHF/SSBequipment.BLX13Equivalent Features: Specified28Volt,30MHzCharacteristics: OutputPower=25W(PEP),MinimumGain=22dB,Efficiency=35 Intermodulation | ELEFLOW eleflow technologies co., ltd. | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF427isDesignedforhighvoltageapplicationsupto30MHz FEATURES: •PG=18dBmin.at25W/30MHz •IMD3=-34dBcmax.at25W(PEP) •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
The RF Line NPN Silicon RF Power Transistor TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh-voltageapplicationsasahigh-powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=13DB | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | | |
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designedprimarilyforhigh-voltageapplicationsasahigh-powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50V,30MHzCharacteristics— Outputpower=150W(PEP) Minimumgain=13DB Efficiency=45 •Intermodulationdistortion@ | MA-COM M/A-COM Technology Solutions, Inc. | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF428isDesignedforhighvoltageapplicationsupto30MHz FEATURES: •PG=14dBmin.at150W/30MHz •IMD3=-30dBcmax.at150W(PEP) •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=13dB | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF429isDesignedforHighvoltageapplicationsuptp30MHz FEATURES: •PG=13dBmin.at150W/30MHz •IMD3=-32dBcmax.at150W(PEP) •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics— OutputPower=150W(PEP) MinimumGain=13dB | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | | |
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50V,30MHzCharacteristics— Outputpower=150W(PEP) Minimumgain=13dB Efficiency=45 •Intermodulationdistortion@ | MA-COM M/A-COM Technology Solutions, Inc. | | | |
NPN Silicon RF power transistor Description: MRF429isdesignedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. Features: Specified50Volt,30MHzCharacteristics: OutputPower=150W(PEP),MinimumGain=13dB,Efficiency=45 | ELEFLOW eleflow technologies co., ltd. | | | |
THE RF LINE NPN SILICON RF POWER TRANSISTOR TheRFLine NPNSiliconRFPowerTransistor ...designedprimaryforhigh-voltageapplicationsashigh-powerlinearamplifierfrom2to30MHz.Idealformarineandbasestationequipment. | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
NPN SILICON RF POWER TRANSISTOR NPN SILICONS
| MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
HIGH-FREQUENCY TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFLowPowerTransistor Designedforamplifier,frequencymultiplier,oroscillatorapplicationsinindustrialequipmentconstructedwithsurfacemountcomponents.Suitableforuseasoutputdriverorpre–driverstagesinVHFandUHFequipment. •LowCostSORFPlasticSu | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforgeneral-purposeRFamplifierapplications,suchas;pre-drivers,Oscillators,etc. Features •LowCostSO-8PlasticSurfaceMountPackage. •S-ParameterCharacterization •TapeandReelPackagingOptionsAvailable •LowVoltageVersionofMRF3866 •MaximumAvailable | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
NPN SILICON RF TRANSISTOR DESCRIPTION: TheASIMRF4427isDesignedforGeneralPurposeAmplifierandOscillatorinVHFandUHFapplications. | ASI Advanced Semiconductor | | | |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforgeneral-purposeRFamplifierapplications,suchas;pre-drivers,Oscillators,etc. Features •LowCostSO-8PlasticSurfaceMountPackage. •S-ParameterCharacterization •TapeandReelPackagingOptionsAvailable •LowVoltageVersionofMRF3866 •MaximumAvailable | ADPOW Advanced Power Technology |  | | |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforgeneral-purposeRFamplifierapplications,suchas;pre-drivers,Oscillators,etc. Features •LowCostSO-8PlasticSurfaceMountPackage. •S-ParameterCharacterization •TapeandReelPackagingOptionsAvailable •LowVoltageVersionofMRF3866 •MaximumAvailable | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforgeneral-purposeRFamplifierapplications,suchas;pre-drivers,Oscillators,etc. Features •LowCostSO-8PlasticSurfaceMountPackage. •S-ParameterCharacterization •TapeandReelPackagingOptionsAvailable •LowVoltageVersionofMRF3866 •MaximumAvailable | ADPOW Advanced Power Technology | | | |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforgeneral-purposeRFamplifierapplications,suchas;pre-drivers,Oscillators,etc. Features •LowCostSO-8PlasticSurfaceMountPackage. •S-ParameterCharacterization •TapeandReelPackagingOptionsAvailable •LowVoltageVersionofMRF3866 •MaximumAvailable | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforgeneral-purposeRFamplifierapplications,suchas;pre-drivers,Oscillators,etc. Features •LowCostSO-8PlasticSurfaceMountPackage. •S-ParameterCharacterization •TapeandReelPackagingOptionsAvailable •LowVoltageVersionofMRF3866 •MaximumAvailable | ADPOW Advanced Power Technology | | | |
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics OutputPower=250W MinimumGain=12dB Effic | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics OutputPower=250W MinimumGain=12dB Effic | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | | |
The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifiersfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50V,30MHzcharacteristics Outputpower=250W Minimumgain=12dB Efficiency=45 •Intermodulationdistortion@250W | MA-COM M/A-COM Technology Solutions, Inc. | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheMRF448isDesignedforHighLinearityClassABHFPowerAmplifierApplicationsupto30MHz. FEATURES: •PG=14dBTypicalat220W/30MHz •IMD3=-32dBcTyp.at220W(PEP) •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN Silicon RF Power Transistor TheRFLine NPNSiliconRFPowerTransistor Designedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. •Specified50Volt,30MHzCharacteristics OutputPower=250W MinimumGain=12dB Effic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
NPN Silicon RF power transistor Description: MRF448isdesignedprimarilyforhigh–voltageapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz.Idealformarineandbasestationequipment. Features: Specified50Volt,30MHzCharacteristics: OutputPower=250W,MinimumGain=1,Efficiency=45 | ELEFLOW eleflow technologies co., ltd. | | | |
THE RF LINE NPNSILICONRFPOWERTRANSISOTRS 50W-3MHzRFPOWERTRANSISTORNPNSILICON | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
The RF Line TheRFLine NPNSILICONRFPOWERTRANSISTORS ...designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto30MHz. •Specified12.5Volt,30MHzCharacteristics- OutputPower=50Watts MinimumGain=11dB Efficiency=50 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
The RF Line NPNSILICONRFPOWERTRANSISOTRS 50W-3MHzRFPOWERTRANSISTORNPNSILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
THE RF LINE NPNSILICONRFPOWERTRANSISOTRS 50W-3MHzRFPOWERTRANSISTORNPNSILICON | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF450AisDesignedfor12.5VoltPowerAmplifierApplicationsupto30MHz. FEATURESINCLUDE: •POUT=50W •PG=11dBMin.@30MHz&50W •Efficiency50 | ASI Advanced Semiconductor | | | |
The RF Line TheRFLine NPNSILICONRFPOWERTRANSISTORS ...designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto30MHz. •Specified12.5Volt,30MHzCharacteristics- OutputPower=50Watts MinimumGain=11dB Efficiency=50 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
The RF Line NPNSILICONRFPOWERTRANSISOTRS 50W-3MHzRFPOWERTRANSISTORNPNSILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
RF POWER TRANSISTORS NPNSILICONRFPOWERTRANSISTORS ...designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto30MHz. ●Specified12.5Volt,30MHzCharacteristics- OutputPower=60Watts MinimumGain=13dB Efficiency=55 | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
RF POWER TRANSISTORS NPNSILICONRFPOWERTRANSISTORS ...designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto30MHz. ●Specified12.5Volt,30MHzCharacteristics- OutputPower=60Watts MinimumGain=13dB Efficiency=55 | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto30MHz. •Specified12.5Volt,30MHzCharacteristics— OutputPower=80Watts MinimumGain=12dB Efficiency=50 | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
RF POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFPowerTransistor Designedforpoweramplifierapplicationsinindustrial,commercialandamateurradioequipmentto30MHz. •Specified12.5Volt,30MHzCharacteristics— OutputPower=80Watts MinimumGain=12dB Efficiency=50 | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | |
MRF4产品属性
- 类型
描述
- 型号
MRF4
- 制造商
Ferraz Shawmut
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
M/A-COM |
23+ |
TO-59 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
M/A-COM |
22+ |
TO-59 |
500 |
进口原装公司现货热卖 |
|||
2015+ |
200 |
公司现货库存 |
|||||
MACOM |
21+ |
NA |
10 |
全新原装公司现货
|
|||
FREESCALE |
145A-09 |
2500 |
专业分销FREESCALE全系列产品!绝对原装正品! |
||||
MOTOROL |
24+ |
CASE211 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Microchip(微芯) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOTOROL |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
MOT |
24+ |
金属帽 |
2978 |
十年品牌!原装现货!!! |
|||
FREESCALE |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
MRF4芯片相关品牌
MRF4规格书下载地址
MRF4参数引脚图相关
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MRF4数据表相关新闻
MRF166W原装现货特价出
MRF166W原装现货特价出
2024-12-11MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21MRF18060A
MRF18060A，全新原装现货0755-82732291当天发货或门市自取.
2020-12-7MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
2020-3-26MRF571
MRF571，全新原装当天发货或门市自取0755-82732291.
2019-11-30MRF572
MRF572，全新原装当天发货或门市自取0755-82732291.
2019-11-30
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