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MRF4晶体管资料

MRF401别名：MRF401三极管、MRF401晶体管、MRF401晶体三极管
MRF401生产厂家：美国摩托罗拉半导体公司
MRF401制作材料：Si-NPN
MRF401性质：调幅（AM）_功率放大（L）
MRF401封装形式：贴片封装
MRF401极限工作电压：30V
MRF401最大电流允许值：3.3A
MRF401最大工作频率：30MHZ
MRF401引脚数：4
MRF401最大耗散功率：25W
MRF401放大倍数：
MRF401图片代号：G-127
MRF401vtest：30
MRF401htest：30000000
MRF401atest：3.3
MRF401wtest：25

MRF401代换 MRF401用什么型号代替：BLX13,BLY93A,3DA30D,

MRF4价格

参考价格：￥49.0490

型号：MRF403 品牌：NKK 备注：这里有MRF4多少钱，2026年最近7天走势，今日出价，今日竞价，MRF4批发/采购报价，MRF4行情走势销售排行榜，MRF4报价。

型号	功能描述	生产厂家企业	LOGO
MRF4	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	BEL	BEL
MRF4	TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES 文件：1.37879 Mbytes Page：4 Pages	BEL	BEL
MRF400	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	BEL	BEL
MRF401	NPN SILICON RF POWER TRANSISTORS 25 W PEP - 30 MHz RF POWER TRANSISTOR NPN SILICON	MOTOROLA 摩托罗拉	MOTOROLA
MRF406	12.5V 30MHz Power Amplifier FEATURES INCLUDE: • Common Emitter • Output Power = 20 W (PEP)	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF406	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF406 is Designed for 12.5 V 30 MHz Power Amplifier Applications. FEATURES INCLUDE: • Common Emitter • Output Power = 20 W (PEP)	ASI	ASI
MRF412	RF POWER TRANSISTOR	MOTOROLA 摩托罗拉	MOTOROLA
MRF421	RF POWER TRANSISTORS NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @	MOTOROLA 摩托罗拉	MOTOROLA
MRF421	The RF Line NPN Silicon RF Power Transistor The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 100 W (P	MACOM	MACOM
MRF421	The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation dist	MA-COM	MA-COM
MRF421	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W(PEP) • Omnigold™ Metalization System	ASI	ASI
MRF421	NPN Silicon RF Power Transistor The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @	ELEFLOW	ELEFLOW
MRF421	Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. ● Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 ● Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.) ● 100 tested for load	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF422	NPN Silicon RF power transistor Description: MRF422 is designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. Features: Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP), Minimum Gain = 10 dB, Efficiency = 40 Intermodulation Distortion @ 150 W (PEP) , IMD = –30 d	ELEFLOW	ELEFLOW
MRF422	The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.) • 100 tested for load m	MA-COM	MA-COM
MRF422	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.	ASI	ASI
MRF422	The RF Line NPN Silicon RF Power Transistor The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P	MACOM	MACOM
MRF422	RF POWER TRANSISTORS NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P	MOTOROLA 摩托罗拉	MOTOROLA
MRF422MP	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.	ASI	ASI
MRF426	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF426 is Designed for high gain amplifier applications up to 30 MHz. FEATURES: • PG = 22 dB min. at 25 W/30 MHz • IMD3 = -30 dBc max. at 25 W(PEP) • Omnigold™ Metalization System • Available as matched pairs.	ASI	ASI
MRF426	The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35 • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max) • 100 tested fo	MA-COM	MA-COM
MRF426	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) Minimum Gain = 22 dB Efficiency = 35 • Intermodulation Disto	MOTOROLA 摩托罗拉	MOTOROLA
MRF426	The RF Line NPN Silicon RF Power Transistor The RF Line NPN Silicon RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) Minimum Gain = 22 dB Efficiency = 35 • Intermodulation Disto	MACOM	MACOM
MRF426	NPN Silicon RF power transistor Description: MRF426 is designed primarily for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. BLX 13 Equivalent Features: Specified 28 Volt, 30 MHz Characteristics: Output Power = 25 W (PEP), Minimum Gain = 22 dB, Efficiency = 35 Intermodulation	ELEFLOW	ELEFLOW
MRF427	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF427 is Designed for high voltage applications up to 30 MHz FEATURES: • PG = 18 dB min. at 25 W/30 MHz • IMD3 = -34 dBc max. at 25 W(PEP) • Omnigold™ Metalization System	ASI	ASI
MRF428	The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP) Minimum gain = 13 DB Efficiency = 45 • Intermodulation distortion @	MA-COM	MA-COM
MRF428	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = -30 dBc max. at 150 W(PEP) • Omnigold™ Metalization System	ASI	ASI
MRF428	The RF Line NPN Silicon RF Power Transistor The RF Line NPN Silicon RF Power Transistor Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 DB	MACOM	MACOM
MRF429	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 dB	MACOM	MACOM
MRF429	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 13 dB	MOTOROLA 摩托罗拉	MOTOROLA
MRF429	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429is Designed for High voltage applications up tp 30MHz FEATURES: • PG= 13 dB min. at 150 W/30 MHz • IMD3= -32 dBc max. at 150 W(PEP) • Omnigold™ Metalization System	ASI	ASI
MRF429	The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP) Minimum gain = 13 dB Efficiency = 45 • Intermodulation distortion @	MA-COM	MA-COM
MRF429	NPN Silicon RF power transistor Description: MRF429 is designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45	ELEFLOW	ELEFLOW
MRF430	THE RF LINE NPN SILICON RF POWER TRANSISTOR The RF Line NPN Silicon RF Power Transistor . . . designed primary for high-voltage applications as high-power linear amplifier from 2 to 30 MHz. Ideal for marine and base station equipment.	MOTOROLA 摩托罗拉	MOTOROLA
MRF433	NPN SILICON RF POWER TRANSISTOR NPN SILICONS	MOTOROLA 摩托罗拉	MOTOROLA
MRF4427	HIGH-FREQUENCY TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Low Power Transistor Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. • Low Cost SORF Plastic Su	MOTOROLA 摩托罗拉	MOTOROLA
MRF4427	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available	ADPOW	ADPOW
MRF4427	NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF4427 is Designed for General Purpose Amplifier and Oscillator in VHF and UHF applications.	ASI	ASI
MRF4427	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available	MICROSEMI 美高森美	MICROSEMI
MRF4427R1	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available	MICROSEMI 美高森美	MICROSEMI
MRF4427R1	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available	ADPOW	ADPOW
MRF4427R2	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available	ADPOW	ADPOW
MRF4427R2	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available	MICROSEMI 美高森美	MICROSEMI
MRF448	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF448 is Designed for High Linearity Class AB HF Power Amplifier Applications up to 30 MHz. FEATURES: • PG = 14 dB Typical at 220 W/30 MHz • IMD3 = -32 dBc Typ. at 220 W(PEP) • Omnigold™ Metalization System	ASI	ASI
MRF448	The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45 • Intermodulation distortion @ 250 W	MA-COM	MA-COM
MRF448	NPN Silicon RF Power Transistor The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Effic	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF448	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Effic	MACOM	MACOM
MRF448	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W Minimum Gain = 12 dB Effic	MOTOROLA 摩托罗拉	MOTOROLA
MRF448	NPN Silicon RF power transistor Description: MRF448 is designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 250 W, Minimum Gain = 1, Efficiency = 45	ELEFLOW	ELEFLOW
MRF450	THE RF LINE NPN SILICON RF POWER TRANSISOTRS 50W - 3MHz RF POWER TRANSISTOR NPN SILICON	MOTOROLA 摩托罗拉	MOTOROLA
MRF450	The RF Line The RF Line NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 50 Watts Minimum Gain = 1 1 dB Efficiency = 50	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF450	The RF Line NPN SILICON RF POWER TRANSISOTRS 50W - 3MHz RF POWER TRANSISTOR NPN SILICON	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF450A	The RF Line The RF Line NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 50 Watts Minimum Gain = 1 1 dB Efficiency = 50	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF450A	The RF Line NPN SILICON RF POWER TRANSISOTRS 50W - 3MHz RF POWER TRANSISTOR NPN SILICON	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF450A	THE RF LINE NPN SILICON RF POWER TRANSISOTRS 50W - 3MHz RF POWER TRANSISTOR NPN SILICON	MOTOROLA 摩托罗拉	MOTOROLA
MRF450A	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF450Ais Designed for 12.5 Volt Power Amplifier Applications up to 30 MHz. FEATURES INCLUDE: • POUT= 50 W • PG= 11 dB Min. @ 30MHz & 50W • Efficiency 50	ASI	ASI
MRF453	RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. ● Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55	MOTOROLA 摩托罗拉	MOTOROLA
MRF453A	RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. ● Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55	MOTOROLA 摩托罗拉	MOTOROLA
MRF454	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50	MOTOROLA 摩托罗拉	MOTOROLA
MRF454	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50	MACOM	MACOM

MRF4产品属性

类型
描述
额定电压(AC)：
28V
额定电压(DC)：
28V
切换角度：
30°
层数：
1
每层极数：
4

MRF4供应商更多...

更新时间：2026-5-15 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MRF49XA	Microchip(微芯)	24+	标准封装	25048	全新原装正品/价格优惠/质量保障	询价
深圳市正纳电子有限公司	MRF49XA-I/ST	Microchip(微芯)	21+	原厂原封	9000	保证原装正品深圳现货	询价
中天科工半导体（深圳）有限公司	MRF477	ONSEMI/安森美	25+	TO-220	45000	ONSEMI/安森美全新现货MRF477即刻询购立享优惠#长期有排单订	询价
深圳市达恩科技有限公司	MRF422	M/A-COM	18+	TO-59	460	专注高频管欢迎来询	询价
深圳市科恒伟业电子有限公司	MRF448	M/A-COM	23+	TO-59	6850	只做原装正品假一赔十为客户做到零风险!!	询价
千层芯半导体(深圳)有限公司	MRF448	MINI	24+	SMD	3600	MINI专营品牌全新原装正品假一赔十	询价
深圳市硅虎电子有限公司	MRF426	MA-COM	25+	CASE211-07	500	进口原装、公司现货	询价
上海鑫科润电子科技有限公司	MRF426	MOTOROLA	15+	211-07	9980	大量原装进口现货,一手货源,一站式服务,可开17%增	询价
深圳市力拓辉电子有限公司	MRF49XA-I/ST	MICROCHIP	21+	SMD	7500	全新原装鄙视假货	询价
深圳市毅创腾电子科技有限公司	MRF453A	FREESCALE		145A-09	2500	专业分销FREESCALE全系列产品!绝对原装正品!	询价

MRF4芯片相关品牌

MRF4规格书下载地址

MRF4参数引脚图相关

MRF4数据表相关新闻

MRF166W原装现货特价出
MRF166W原装现货特价出
2024-12-11
MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21
MRF18060A
MRF18060A，全新原装现货0755-82732291当天发货或门市自取.
2020-12-7
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
2020-3-26
MRF572
MRF572，全新原装当天发货或门市自取0755-82732291.
2019-11-30
MRF571
MRF571，全新原装当天发货或门市自取0755-82732291.
2019-11-30

DdatasheetPDF页码索引

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找IC，尽在114IC

MRF4晶体管资料

MRF4价格

MRF4产品属性

MRF4供应商更多...

MRF4芯片相关品牌

MRF4规格书下载地址

MRF4参数引脚图相关

MRF4数据表相关新闻

MRF166W原装现货特价出

MRF448只有原装，现货，现货，现货！

MRF18060A

MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S

MRF572

MRF571

DdatasheetPDF页码索引