NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The MRF406 is Designed for 12.5 V 30 MHz Power Amplifier Applications. FEATURES INCLUDE: • Common Emitter • Output Power = 20 W (PEP)

12.5V 30MHz Power Amplifier

FEATURES INCLUDE: • Common Emitter • Output Power = 20 W (PEP)

RF & MICROWAVE TRANSISTORS

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NPN SILICON RF POWER TRANSISTOR

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A • Packaged in Compact JEDEC TO–220AB

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

Wideband, Low Power Monolithic Op Amp

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Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages