The RF Line

​​​​​​​NPN Silicon RF Power Transistor

Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

• Specified 12.5 Volt, 30 MHz Characteristics —

Output Power = 100 W (PEP)

Minimum Gain = 10 dB

Efficiency = 40

• Intermodulation Distortion @ 100 W (PEP) —

IMD = –30 dB (Min)

• 100 Tested for Load Mismatch at all Phase Angles with 30:1 VSWR