NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF426 is Designed for high gain amplifier applications up to 30 MHz. FEATURES: • PG = 22 dB min. at 25 W/30 MHz • IMD3 = -30 dBc max. at 25 W(PEP) • Omnigold™ Metalization System • Available as matched pairs.

The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V

Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35 • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max) • 100 tested fo

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) Minimum Gain = 22 dB Efficiency = 35 • Intermodulation Disto

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) Minimum Gain = 22 dB Efficiency = 35 • Intermodulation Disto

NPN Silicon RF power transistor

Description: MRF426 is designed primarily for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. BLX 13 Equivalent Features: Specified 28 Volt, 30 MHz Characteristics: Output Power = 25 W (PEP), Minimum Gain = 22 dB, Efficiency = 35 Intermodulation

Bipolar

Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. ·Specified 28 V, 30 MHz Characteristics: Output Power= 25 W (PEP), , Minimum Gain = 22 dB, Efficiency = 35%\n·Intermodulation Distortion @ 25 W (PEP) —IMD = –30 dB (max)\n·Class A and AB Characterization\n·100% Tested for Load Mismatch at all Phase Angels with 30:1 VSWR\n·BLX 13 Equivalent;

封装/外壳：211-07 包装：托盘 描述：TRANS RF NPN 35V 3A 211-07 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans RF BJT NPN 35V 3A 4-Pin Case 211-07

The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V

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The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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POWER TRANSISTORS(6.0A,375-400V,113W)

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 900 Volt Blocking Capability

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 900 Volt Blocking Capability

POWER TRANSISTORS(6.0A,375-400V,113W)

Wideband, Low-Noise, Voltage Feedback Op Amp

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