NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.) • 100 tested for load m

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 150 W (P

NPN Silicon RF power transistor

Description: MRF422 is designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. Features: Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP), Minimum Gain = 10 dB, Efficiency = 40 Intermodulation Distortion @ 150 W (PEP) , IMD = –30 d

Bipolar

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. ·Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%,Minimum Gain = 10 dB\n·Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.)\n·100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR;

封装/外壳：211-11，2 型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 35V 211-11 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans RF BJT NPN 40V 20A 4-Pin Case 211-11

The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V

文件：236.16 Kbytes Page：6 Pages

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF422 is Designed for 2.0 MHz to 30 MHz, 28 V High Power Linear Amplifier Applications. For hFE Matched Pairs Order ASI MRF422MP.

The RF Line NPN Silicon Power Transistor

文件：236.16 Kbytes Page：6 Pages

The RF Line NPN Silicon Power Transistor

文件：662.32 Kbytes Page：7 Pages

High Voltage Transistors(NPN)

High Voltage Transistors NPN Silicon

High Voltage Transistors(NPN Silicon)

High Voltage Transistors NPN Silicon

COPS Family Users Guide Table of Contents

文件：8.5059 Mbytes Page：79 Pages

2.0 mm Series

文件：31.43 Kbytes Page：1 Pages

2.0 mm Series

文件：30.82 Kbytes Page：1 Pages