RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF454 is Designed for 12.5 Volt Power Amplifier Applications up to 30 MHz. FEATURES INCLUDE: • Replacement for SD1405 • PG = 12 dB Min. @ 30MHz & 80W • Withstands 20:1 Load VSWR

The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 V, 30 MHz characteristics • Output power = 80 W • Minimum gain = 12 dB • Efficiency = 50

Bipolar

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. ·Specified 12.5 V, 30 MHz characteristics:\n·Efficiency = 50%\n·Minimum gain = 12 dB\n·Output power = 80 W;

The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V

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封装/外壳：211-11，2 型 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 18V 211-11 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER TRANSISTOR NPN SILICON

Trans RF BJT NPN 25V 20A 4-Pin Case 211-11

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

SURFACE MOUNT SILICON ZENER DIODES

VZ : 2.7 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt