HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. • Low Cost SORF Plastic Su

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF4427 is Designed for General Purpose Amplifier and Oscillator in VHF and UHF applications.

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 20V 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 20V 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

30V P-Channel MOSFET

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Product Summary VDS (V) = -30V I

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS &

Gasket design for optimal acoustic performance

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30V P-Channel MOSFET

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