HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. • Low Cost SORF Plastic Su

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF4427 is Designed for General Purpose Amplifier and Oscillator in VHF and UHF applications.

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 20V 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

HIGH-FREQUENCY TRANSISTOR NPN SILICON

NPN SILICON RF TRANSISTOR

RF/Microwave Si BJT Power Devices & Pallets

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc. Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 20V 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

文件：64.459 Kbytes Page：5 Pages

1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

文件：75.47 Kbytes Page：6 Pages

1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

文件：75.47 Kbytes Page：6 Pages

1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

文件：75.47 Kbytes Page：6 Pages