RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 100 W (P

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation dist

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W(PEP) • Omnigold™ Metalization System

Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz

Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. ● Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 ● Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.) ● 100 tested for load

NPN Silicon RF Power Transistor

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ.FEATURES:\n• PG = 12 dB min. at 100 W/30 MHz\n• IMD3 = -30 dBc max. at 100 W(PEP)\n• Omnigold™ Metalization System

The RF Line NPN silicon RF power transistor

Trans GP BJT NPN 20V 20A 4-Pin Case 211-11

封装/外壳：211-11，2 型 包装：托盘 描述：TRANS RF NPN 20V 20A 211-11 分立半导体产品 晶体管 - 双极（BJT）- 射频

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V

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The RF Line NPN Silicon Power Transistor

文件：189.77 Kbytes Page：5 Pages

The RF Line NPN Silicon Power Transistor

文件：189.77 Kbytes Page：5 Pages

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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