MRF421价格

参考价格:¥453.7478

型号:MRF421 品牌:M/A-Com 备注:这里有MRF421多少钱,2025年最近7天走势,今日出价,今日竞价,MRF421批发/采购报价,MRF421行情走势销售排行榜,MRF421报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MRF421

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W(PEP) • Omnigold™ Metalization System

ASI

MRF421

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 • Intermodulation dist

MA-COM

MRF421

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Motorola

摩托罗拉

MRF421

The RF Line NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @ 100 W (P

MACOM

MRF421

Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz

Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz. ● Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP) Minimum gain = 10 dB Efficiency = 40 ● Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.) ● 100 tested for load

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MRF421

NPN Silicon RF Power Transistor

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

ELEFLOW

MRF421

封装/外壳:211-11,2 型 包装:托盘 描述:TRANS RF NPN 20V 20A 211-11 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

MRF421

NPN SILICON RF POWER TRANSISTOR

ETC

知名厂家

MRF421

The RF Line NPN silicon RF power transistor

ETC

知名厂家

MRF421

Trans GP BJT NPN 20V 20A 4-Pin Case 211-11

NJS

MRF421

The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V

文件:189.77 Kbytes Page:5 Pages

MA-COM

The RF Line NPN Silicon Power Transistor

文件:189.77 Kbytes Page:5 Pages

MA-COM

The RF Line NPN Silicon Power Transistor

文件:189.77 Kbytes Page:5 Pages

MA-COM

421 LED board-to-board connector

文件:333.58 Kbytes Page:1 Pages

DBLECTRO

Capacity (20-hour) 56Ah

文件:226.02 Kbytes Page:1 Pages

GSYUASABATTERY

MAGNETIC-LATCHING ESTABLISHED RELIABILITY TO-5 RELAYS

文件:246.85 Kbytes Page:6 Pages

WILLOW

MAGNETIC-LATCHING ESTABLISHED RELIABILITY TO-5 RELAYS

文件:246.85 Kbytes Page:6 Pages

WILLOW

MAGNETIC-LATCHING ESTABLISHED RELIABILITY TO-5 RELAYS

文件:246.85 Kbytes Page:6 Pages

WILLOW

MRF421产品属性

  • 类型

    描述

  • 型号

    MRF421

  • 制造商

    M/A-COM Technology Solutions

  • 功能描述

    TRANS GP BJT NPN 20V 20A 4PIN CASE 211-11 - Bulk

  • 制造商

    M/A-COM Technology Solutions

  • 功能描述

    RF POWER TRANSISTOR BIPOLAR/HBT

  • 制造商

    M/A-COM Technology Solutions

  • 功能描述

    Trans GP BJT NPN 20V 20A 4-Pin Case 211-11

更新时间:2025-9-21 11:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
M/A-COM
23+
TO-59
8510
原装正品代理渠道价格优势
M/A-COM
2308+
原装正品
4285
十年专业专注 优势渠道商正品保证
MACOM
24+
原装原封
25000
##公司100%原装现货,假一罚十!可含税13%免费提供样品支持
MOTOROLA
23+
TO-59r
655
专营高频管模块,全新原装!
MOTOROLA
22+
control
3000
原装正品,支持实单
24+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
MOT
24+
580
MOTOROLA
23+
TO-59r
5100
大量原装高频管、模块现货供应!
MOTOROLA
25+
高频管
6500
十七年专营原装现货一手货源,样品免费送
M/A-COM
NA
5500
一级代理 原装正品假一罚十价格优势长期供货

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