RF POWER TRANSISTORS

NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. ● Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

RF POWER TRANSISTORS

RF POWER TRANSISTORS

NPN SILICON RF POWER TRANSISTORS . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. ● Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

60 W-30 MHz RF POWER TRANSISTORS NPN SILICON

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

N-CHANNEL POWER MOSFETS

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a

CRT Display Video Output Amplifier

Features • Active load circuits • Wide bandwidth and high output voltage. Optimal for use in fH (horizontal deflection frequency) = 90 kHz class ultrahigh precision monitors. • Single 15-pin SIP molded package houses three channels.

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt