SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

Schottky Power Rectifier

FEATURES · Low Forward Voltage Drop · Guarding for Stress Protection · Low Power Losses, High Efficiency APPLICATIONS · Switching Power Supplies · Converters · Freewheeling Diodes

Schottky Power Rectifier, Switch-mode, 10 A, 35 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, • Highly Stable Oxide Passivated Junction\n• Guardring for Stress Protection\n• Matched dual die construction - May be Paralleled for High Current Output\n• High dv/dt Capability\n• Short Heat Sink Tap Manufactured - Not Sheared\n• Very Low Forward Voltage Drop\n• Epoxy Meets UL94, VO at 1/8\"Mechan;

SWITCHMODE™ Schottky Rectifier D2PAK Power Surface Mount Package

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 35V 5A DPAK 分立半导体产品 二极管 - 整流器 - 阵列

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

包装：卷带（TR） 描述：DIODE SCHOTTKY DPAK 分立半导体产品 二极管 - 整流器 - 阵列

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

SWITCHMODE Schottky Power Rectifier

文件：117.22 Kbytes Page：6 Pages

Switch-mode Schottky Power Rectifier

文件：74.18 Kbytes Page：6 Pages

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara