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MBR1035价格
参考价格：￥2.7432
型号：MBR1035 品牌：Fairchild 备注：这里有MBR1035多少钱，2025年最近7天走势，今日出价，今日竞价，MBR1035批发/采购报价，MBR1035行情走势销售排行榜，MBR1035报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR1035 | SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep | Motorola 摩托罗拉 |   | |
MBR1035 | 10 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage d | Fairchild 仙童半导体 | | |
MBR1035 | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 10.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forwa | GE | | |
MBR1035 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • | MCC | | |
MBR1035 | 10.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | | |
MBR1035 | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification | ONSEMI 安森美半导体 | | |
MBR1035 | Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世威世科技公司 | | |
MBR1035 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov | BILIN 银河微电 | | |
MBR1035 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | | |
MBR1035 | Schottky Rectifier, 10 A FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | |
MBR1035 | 10A Schottky Barrier Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guarding for over voltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar | TAITRON | | |
MBR1035 | SCHOTTKY BARRIER RECTIFIER DIODES FEATURES : * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * Guardring for overvoltage protection * For use in low voltage, high frequency inverters, free wheeling, and pol | SYNSEMI | | |
MBR1035 | 10Amp schottky barrier rectifier 20to100 volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYI 商朗电子 | | |
MBR1035 | Schottky Barrier Rectifiers FEATURES Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in low voltage, high frequency inverters, free wheeling, | SSC Silicon Standard Corp. | | |
MBR1035 | 10A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Pro | DIODES 美台半导体 | | |
MBR1035 | Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | | |
MBR1035 | 10.0AMPS.Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANG 鲁光电子 | | |
MBR1035 | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | JIANGSU 长电科技 | | |
MBR1035 | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANG 鲁光电子 | | |
MBR1035 | SCHOTTKY RECTIFERS SCHOTTKY RECTIFERS | DIGITRON | | |
MBR1035 | Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | | |
MBR1035 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | | |
MBR1035 | 10A SCHOTTKY BARRIER RECTIFIER Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | | |
MBR1035 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | | |
MBR1035 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | | |
MBR1035 | SCHOTTKY RECTIFIER Features: • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | | |
MBR1035 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | DSK | | |
MBR1035 | SWITCHMODE™ Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Cha | ONSEMI 安森美半导体 | | |
MBR1035 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recogniti | SAMYANG 三阳电子 | | |
MBR1035 | SCHOTTKY RECTIFIER Features 150℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are | SMCDIODE 桑德斯微电子 | | |
MBR1035 | Schottky Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling | ONSEMI 安森美半导体 | | |
MBR1035 | 封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V 10A TO220-2 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
MBR1035 | 封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V 10A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
MBR1035 | Schottky | DIODES 美台半导体 | | |
MBR1035 | SCHOTTKY BARRIER RECTIFIER 文件：292.94 Kbytes Page：3 Pages | HORNBY 南通康比电子 | | |
MBR1035 | LOW POWER LOSS HIGH EFFICIENCY 文件：247.07 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MBR1035 | Schottky Barrier Rectifier 文件：236.4 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MBR1035 | 10.0 AMPS. Schottky Barrier Rectifiers High surge capability 文件：257.14 Kbytes Page：3 Pages | TSC 台湾半导体 | | |
MBR1035 | Schottky Barrier Rectifier 文件：226.21 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MBR1035 | High Tjm Low IRRM Schottky Barrier Diodes 文件：87.81 Kbytes Page：2 Pages | SIRECTIFIER 矽莱克电子 | | |
MBR1035 | Voltage Range 35 to 200 Volts Current 10.0 Amperes 文件：332.05 Kbytes Page：2 Pages | GXELECTRONICS 星合电子 | | |
MBR1035 | 10.0AMPS.Schottky Barrier Rectifiers 文件：918.68 Kbytes Page：2 Pages | KERSEMI | | |
MBR1035 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 文件：59.08 Kbytes Page：2 Pages | KERSEMI | | |
MBR1035 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：112.59 Kbytes Page：3 Pages | MCC | | |
MBR1035 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：434.48 Kbytes Page：3 Pages | MCC | | |
MBR1035 | Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts , Forward Current 10.0 Amperes 文件：319.37 Kbytes Page：3 Pages | FS | | |
MBR1035 | 10.0 AMPS. Schottky Barrier Rectifiers 文件：187.21 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR1035 | Low Power Loss/High Efficiency 文件：448.58 Kbytes Page：2 Pages | LEIDITECH 雷卯电子 | | |
MBR1035 | 10A SCHOTTKY BARRIER RECTIFIER 文件：72.31 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MBR1035 | 10.0 AMPS. Schottky Barrier Rectifiers 文件：613.1 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR1035 | 10.0 AMPS. Schottky Barrier Rectifiers 文件：264.67 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR1035 | 10A SCHOTTKY BARRIER RECTIFIER 文件：75.69 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
MBR1035 | Schottky Rectifiers 文件：48.03 Kbytes Page：3 Pages | Fairchild 仙童半导体 | | |
MBR1035 | Schottky Barrier Rectifiers 文件：255.85 Kbytes Page：3 Pages | Good-Ark 固锝电子 | | |
SWITCHMODE™ Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Cha | ONSEMI 安森美半导体 | | ||
Schottky Rectifiers Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling | ONSEMI 安森美半导体 | | ||
Schottky Diodes Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106 | RFE RFE international | | ||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u | HORNBY 南通康比电子 | | ||
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec | MOSPEC 统懋 | | ||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection app | SIRECTIFIER 矽莱克电子 | |
MBR1035产品属性
- 类型
描述
- 型号
MBR1035
- 功能描述
肖特基二极管与整流器 10A 35V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO-220 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
MOTOROLA/摩托罗拉 |
25+ |
DIODE |
880000 |
明嘉莱只做原装正品现货 |
|||
FSC |
25+23+ |
TO-220 |
16184 |
绝对原装正品全新进口深圳现货 |
|||
IR |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
24+ |
3000 |
公司现货 |
|||||
MCC/美微科 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MOTOROLA |
97+ |
TO-220AC |
200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
FAIRCHILD/仙童 |
22+ |
TO-220-2 |
6000 |
十年配单,只做原装 |
|||
ON/IR |
NEW |
TO-220AC |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
MBR1035规格书下载地址
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