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K9F1208价格
参考价格：￥148.9580
型号：K9F1208U0A-VIB0T00 品牌：Samsung 备注：这里有K9F1208多少钱，2025年最近7天走势，今日出价，今日竞价，K9F1208批发/采购报价，K9F1208行情走势销售排行榜，K9F1208报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs o | Samsung 三星 |   | ||
64M x 8 Bits NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica | Samsung 三星 | | ||
512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs o | Samsung 三星 | | ||
64M x 8 Bits NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs o | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bits NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µ | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory | Samsung 三星 | | ||
512Mb/256Mb 1.8V NAND Flash Errata | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory | Samsung 三星 | |
K9F1208产品属性
- 类型
描述
- 型号
K9F1208
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
存储器 |
TSOP |
42017 |
SAMSUNG存储芯片K9F1208U0M-YCB0即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
22+ |
TSOP |
8000 |
原装正品支持实单 |
|||
SAMSUNG/三星 |
23+ |
TSOP48 |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG/三星 |
2402+ |
TSOP-48 |
8324 |
原装正品!实单价优! |
|||
SAMSUNG |
TSOP48 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
SAMSUNG |
22+ |
TSOP48 |
20000 |
公司只做原装 品质保障 |
|||
三星 |
23+ |
TSOP48 |
5000 |
原装正品,假一罚十 |
|||
SAMSUNG |
24+ |
TSOP |
3 |
||||
SAMSUNG/三星 |
24+ |
TSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG |
TSOP-48 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
K9F1208芯片相关品牌
K9F1208规格书下载地址
K9F1208参数引脚图相关
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- l482
- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
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- l293d
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- l101
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- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- KA-260
- KA258ADTF
- KA2531S28
- KA-1C-6D
- KA-1C-48D
- KA-1C-12D
- KA-1C-110D
- KA-14DY-24
- KA-14DG-24
- KA-14DG-12
- KA-14AG-6
- KA1458I
- KA1458D
- KA1458A
- KA1458
- KA1-380
- KA-133
- KA1222
- KA-11AY-240
- KA10R25
- KA-100
- KA-076
- KA-066
- KA05T
- KA-058
- KA-042
- KA-030
- KA-025
- KA02066-D105
- KA02035-0013
- KA-020
- KA02
- KA-015
- KA-012
- KA01
- K9W4G08U1M-YCB0000
- K9S5608V0BSSB0000$PRG
- K9F2808U0C-YIB0000
- K9F1G08
- K9F1208U0A-VIB0T00
- K99X-9S-K-BLK
- K99-37P-K-BLK
- K99-25S-K-BLK
- K96-906.01BLK/2
- K96-902.01BLK/2
- K9656M
- K9650M
- K-952D
- K-952AJ
- K9362M
- K9356M
- K9353M
- K9352M
- K9352
- K9351M
- K9351
- K92111-P2
- K9024BLU
- K900900
- K9001BLU
- K900022
- K900021
- K900020
- K900019
- K900018
- K900016
- K900015
- K900014
- K9/240-PROPLUS
- K8WH41GLFS
- K8WH41G
- K8SR41GLFS
- K8SR41G
- K8PG41G
- K8OG41G
- K8DS-PH1200/480VAC
- K8BU41G
- K8AK-VW324VAC/DC
- K8AK-VW224VAC/DC
K9F1208数据表相关新闻
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深圳市博瑞威电子有限公司 可开13%发票，价格优势后期可月结，QQ加2965210490 ，手机号码13560731313，期待您的来电，期待与您合作。
2019-5-13
DdatasheetPDF页码索引
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