位置:K9F1208Q0B-H > K9F1208Q0B-H详情

K9F1208Q0B-H中文资料

厂家型号

K9F1208Q0B-H

文件大小

767.01Kbytes

页面数量

45

功能描述

64M x 8 Bit NAND Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K9F1208Q0B-H数据手册规格书PDF详情

GENERAL DESCRIPTION

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 1.8V device(K9F1208Q0B) : 1.70~1.95V

- 2.65V device(K9F1208D0B) : 2.4~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

• Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

• Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15ms(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.

K9F1208Q0B-H产品属性

  • 类型

    描述

  • 型号

    K9F1208Q0B-H

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    64M x 8 Bit NAND Flash Memory

更新时间:2026-2-14 15:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
24+
BGA
813
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
SAMSUNG
17+
BGA
9888
全新进口原装,现货库存
SAMSUNG
24+
BGA
3000
全新原装现货 优势库存
Samsung
23+
FBGA
8000
只做原装现货
SAMSUNG
0449+
FBGA
27
SAMSUNG
17+
BGA
6200
100%原装正品现货
SAMSUNG
2016+
BGA
6000
公司只做原装,假一罚十,可开17%增值税发票!
SAMSUNG
23+
BGA
8650
受权代理!全新原装现货特价热卖!
SAMSUNG
16+
BGA
5188
全新、原装