位置:K9F1208D0A-P > K9F1208D0A-P详情

K9F1208D0A-P中文资料

厂家型号

K9F1208D0A-P

文件大小

748.18Kbytes

页面数量

46

功能描述

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K9F1208D0A-P数据手册规格书PDF详情

GENERAL DESCRIPTION

Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input.

FEATURES

• Voltage Supply

- 2.65V device(K9F12XXD0A) : 2.4~2.9V

- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array

- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit

- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit

- Data Register

- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit

- X16 device(K9F1216X0A) : (256 + 8)bit x16bit

• Automatic Program and Erase

- Page Program

- X8 device(K9F1208X0A) : (512 + 16)Byte

- X16 device(K9F1216X0A) : (256 + 8)Word

- Block Erase :

- X8 device(K9F1208X0A) : (16K + 512)Byte

- X16 device(K9F1216X0A) : ( 8K + 256)Word

• Page Read Operation

- Page Size

- X8 device(K9F1208X0A) : (512 + 16)Byte

- X16 device(K9F1216X0A) : (256 + 8)Word

- Random Access : 12ms(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F12XXX0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208U0A-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm)

- K9F12XXX0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208U0A-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0A-V,F(WSOPI ) is the same device as K9F1208U0A-Y,P(TSOP1) except package type.

K9F1208D0A-P产品属性

  • 类型

    描述

  • 型号

    K9F1208D0A-P

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

更新时间:2026-2-9 16:08:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Samsung
25+
BGA
58
百分百原装正品 真实公司现货库存 本公司只做原装 可
Samsung
23+
BGA
8560
受权代理!全新原装现货特价热卖!
Samsung
23+
BGA
8000
只做原装现货
SAMSUNG
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
SAMSUNG
22+
BGA
8000
原装正品支持实单
SAMSUNG
2023+
TSSOP
50000
原装现货
SAMSUNG
23+
BGA
5000
原装正品,假一罚十
SAMSUNG
17+
BGA
9888
全新进口原装,现货库存
SAMSUNG
24+
BGA
3000
全新原装现货 优势库存
SAMSUNG
0449+
FBGA
27