位置：首页 > IC中文资料第5886页 > K9F1208D0B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K9F1208D0B | 64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 |   | |
K9F1208D0B | 64M x 8 Bit NAND Flash Memory | Samsung 三星 | | |
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | | ||
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical | Samsung 三星 | |
K9F1208D0B产品属性
- 类型
描述
- 型号
K9F1208D0B
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
64M x 8 Bit NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SAMSUNG |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
98900 |
原厂原装正品现货!! |
|||
SAMSUNG |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
|||
SAMSUNG |
24+ |
BGA |
813 |
||||
SAMSUNG |
2023+ |
TSSOP |
50000 |
原装现货 |
|||
SAMSUNG/三星 |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Samsung |
23+ |
BGA |
8000 |
只做原装现货 |
|||
SAMSUNG |
1923+ |
BGA |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
SAMSUNG |
24+ |
BGA |
26200 |
原装现货,诚信经营! |
K9F1208D0B芯片相关品牌
K9F1208D0B规格书下载地址
K9F1208D0B参数引脚图相关
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2019-5-13
DdatasheetPDF页码索引
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