型号 功能描述 生产厂家 企业 LOGO 操作
K9F1208Q0A

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

Samsung

三星

512Mb/256Mb 1.8V NAND Flash Errata

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

K9F1208Q0A产品属性

  • 类型

    描述

  • 型号

    K9F1208Q0A

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb/256Mb 1.8V NAND Flash Errata

更新时间:2025-11-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
27
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG
2016+
BGA
6000
公司只做原装,假一罚十,可开17%增值税发票!
ON
23+
TO-3
6500
全新原装假一赔十
SAMSUNG/三星
25+
FBGA
996880
只做原装,欢迎来电资询
SAMSUNG/三星
24+
BGA
20000
不忘初芯-只做原装正品
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
06+
BGA
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
24+
FBGA
13718
只做原装 公司现货库存
SAMSUNG/三星
23+
FBGA
98900
原厂原装正品现货!!
SAMSUNG/三星
22+
BGA
12245
现货,原厂原装假一罚十!

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