位置:首页 > IC中文资料第6477页 > K9F1208Q0B
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
K9F1208Q0B | 64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | |||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | |||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | |||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | |||
512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica | Samsung 三星 |
K9F1208Q0B产品属性
- 类型
描述
- 型号
K9F1208Q0B
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
64M x 8 Bit NAND Flash Memory
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
FBGA |
12000 |
原装正品 有挂就有货 |
|||
SAMSUNG |
17+ |
BGA |
9888 |
全新进口原装,现货库存 |
|||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SAMSUM |
25+ |
BGA |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
SAMSUNG/三星 |
22+ |
BGA |
31238 |
原装正品现货 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
98900 |
原厂原装正品现货!! |
|||
Samsung |
2016+ |
FBGA |
6528 |
只做进口原装现货!或订货,假一赔十! |
|||
SAMSUNG |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
SAMSUNG/三星 |
24+ |
BGA |
20000 |
不忘初芯-只做原装正品 |
K9F1208Q0B芯片相关品牌
K9F1208Q0B规格书下载地址
K9F1208Q0B参数引脚图相关
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2019-5-13
DdatasheetPDF页码索引
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