位置：首页 > IC中文资料第6473页 > K9F1208Q0B-P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K9F1208Q0B-P | 64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 |   | |
512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | | ||
64M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on | Samsung 三星 | |
K9F1208Q0B-P产品属性
- 类型
描述
- 型号
K9F1208Q0B-P
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
64M x 8 Bit NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-3 |
6500 |
全新原装假一赔十 |
|||
SAM |
6000 |
面议 |
19 |
BGA |
|||
SAMSUNG/三星 |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SAMSUNG |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG/三星 |
2447 |
FBGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG |
1923+ |
BGA |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
SAMSUNG/三星 |
23+ |
FBGA |
50000 |
全新原装正品现货,支持订货 |
|||
Samsung |
23+ |
FBGA |
8000 |
只做原装现货 |
K9F1208Q0B-P芯片相关品牌
K9F1208Q0B-P规格书下载地址
K9F1208Q0B-P参数引脚图相关
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K9F1208Q0B-P数据表相关新闻
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2019-5-13
DdatasheetPDF页码索引
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