型号 功能描述 生产厂家 企业 LOGO 操作
K9F1208U0B-V

64M x 8 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on

Samsung

三星

64M x 8 Bit NAND Flash Memory

General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

Samsung

三星

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical

Samsung

三星

64M x 8 Bit NAND Flash Memory

General Description The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an er

Samsung

三星

K9F1208U0B-V产品属性

  • 类型

    描述

  • 型号

    K9F1208U0B-V

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    64M x 8 Bit NAND Flash Memory

更新时间:2025-9-24 15:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
AKM
24+
TSSOP48
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG/三星
24+
SOT363
9600
原装现货,优势供应,支持实单!
SAMSUNG
18+
TSOP
85600
保证进口原装可开17%增值税发票
SAMSUNG
2023+
TSSOP
50000
原装现货
SAMSUNG(三星)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SAMSUNG/三星
20+
TSOP
35830
原装优势主营型号-可开原型号增税票
SAMSUNG
0928+
TSSOP48
61
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
25+
TSOP48
3000
全新原装、诚信经营、公司现货销售

K9F1208U0B-V数据表相关新闻

  • K7R161882B-EI16

    K7R161882B-EI16适用于许多应用领域,如通信设备、计算机、嵌入式系统等。

    2023-6-30
  • K8D1616UBM-FI10 原装现货

    K8D1616UBM-FI10 可做含税,支持实单

    2021-9-14
  • K9F1208R0C-JIB0

    https://hch01.114ic.com/

    2020-11-13
  • K9F4G08UOB-PCBO

    K9F4G08UOB-PCBO,当天发货0755-82732291全新原装现货或门市自取.

    2020-9-24
  • K9F5608R0D-JIB0T00

    IS45S16160D-75ETLA1 ISSI TSOP-54 2017+ 49500 K4B2G1646F-BCK0T00 SAMSUNG FBGA-96 2018+ 40000 K4B4G0846E-BCMAT00 SAMSUNG FBGA-78 2018+ 50000 K4B8G0846D-MYK0000 SAMSUNG FBGA-78 2018+ 8090 K4M51323PI-HG75000 SAMSUNG FBGA-90 2012+ 300000 EDS1232AASE-75-E ELPIDA FBGA-90 2008+ 78482 FMS6416LBH-75EER

    2019-12-10
  • K9F1208U0C-PCB0

    深圳市博瑞威电子有限公司 可开13%发票,价格优势后期可月结,QQ加2965210490 ,手机号码13560731313,期待您的来电,期待与您合作。

    2019-5-13