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位置：首页 > IC中文资料第6412页 > K4H511638B

K4H511638B价格

参考价格：￥149.8562

型号：K4H511638B-TCCC000 品牌：Samsung 备注：这里有K4H511638B多少钱，2024年最近7天走势，今日出价，今日竞价，K4H511638B批发/采购报价，K4H511638B行情走势销售排行榜，K4H511638B报价。
型号 功能描述 生产厂家&企业 LOGO 操作
K4H511638

512MbC-dieDDRSDRAMSpecification

文件：212.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TC/LA2

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TC/LB0

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TC/LB3

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-UC/LA2

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-UC/LB0

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-UC/LB3

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-G

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-GC/LA2

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-GC/LB0

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-GC/LB3

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-GC/LCC

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-ZC/LA2

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-ZC/LB0

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-ZC/LB3

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638B产品属性

  • 类型

    描述

  • 型号

    K4H511638B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb B-die DDR SDRAM Specification

K4H511638B供应商更多...

更新时间：2024-6-17 16:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市振鑫微电子科技有限公司
K4H511638G-LCCC
SAMSUNG(三星)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
深圳市近平电子有限公司
K4H511638J-LCCC
SAMSUNG
12+
TSOP66
6000
原装正品现货
询价
标准国际(香港)有限公司
K4H511638D-UCCC
SAMSUNG
08+
ROHS
12
全新原装!优势库存热卖中!
询价
深圳市拓亿芯电子有限公司
K4H511638C-UCCC
SAMSUNG/三星
23+
TSOP-66
25000
全新原装现货,假一赔十
询价
深圳市科恒伟业电子有限公司
K4H511638F-LCCC
SAMSUNG/三星
21+
TSOP66
9800
只做原装正品假一赔十!正规渠道订货!
询价
深圳市力拓辉电子有限公司
K4H511638D-UCB3
SAMSUNG
21+
TSOP66
5000
全新原装 鄙视假货15118075546
询价
深圳市芯祺盛科技有限公司
K4H511638D-UCCC
SAMSUNG/三星
08+
TSOP
10
只做正品,原装现货实单来谈
询价
深圳市鸿昌盛电子科技有限公司
K4H511638D-UCC
SAMSUNG
2014+
480
公司现货库存
询价
瀚佳科技(深圳)有限公司
K4H511638J-BCCC
SAMSUNG
19+
TSOP66
36500
一级代理/全新现货/长期供应!!
询价
深圳市华康联电子科技有限公司
K4H511638G-LCCC
SAMSUNG
22+
31
代理分销现货假一罚十
询价

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