位置：首页 > IC中文资料 > K4H511638B-UCSLASHLA2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4H511638B-UCSLASHLA2 | 512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl | Samsung 三星 |   |
更新时间：2025-10-12 20:00:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
TSSOP66 |
100000 |
代理渠道/只做原装/可含税 |
|||
SAMSUNG |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SAMSUNG |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
|||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
24+ |
TSSOP |
265 |
|||||
SAMSUNG/三星 |
24+ |
TSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG |
16+ |
EON |
4000 |
进口原装现货/价格优势! |
|||
HYNIX/海力士 |
2447 |
FBGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG/三星 |
20+ |
TSSOP |
19570 |
原装优势主营型号-可开原型号增税票 |
|||
SAMSUNG/三星 |
11+ |
TSOP |
95 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
K4H511638B-UCSLASHLA2芯片相关品牌
K4H511638B-UCSLASHLA2规格书下载地址
K4H511638B-UCSLASHLA2参数引脚图相关
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- K4H511638C-UC
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- K4H511638C-TLA2
- K4H511638C-TLA0
- K4H511638C-TCB0
- K4H511638C-TCA2
- K4H511638C-TCA0
- K4H511638B-ZCSLASHLCC
- K4H511638B-ZCSLASHLB3
- K4H511638B-ZCSLASHLB0
- K4H511638B-ZCSLASHLA2
- K4H511638B-ZC/LCC
- K4H511638B-ZC/LB3
- K4H511638B-ZC/LB0
- K4H511638B-ZC/LA2
- K4H511638B-UCSLASHLCC
- K4H511638B-UCSLASHLB3
- K4H511638B-UCSLASHLB0
- K4H511638B-UC/LCC
- K4H511638B-UC/LB3
- K4H511638B-UC/LB0
- K4H511638B-UC/LA2
- K4H511638B-TLB0
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- K4H511638B-TCSLASHLCC
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- K4H511638B-TCSLASHLA2
- K4H511638B-TCB0
- K4H511638B-TCA2
- K4H511638B-TCA0
- K4H511638B-TC/LCC
- K4H511638B-TC/LB3
- K4H511638B-TC/LB0
- K4H511638B-TC/LA2
- K4H511638B-GCSLASHLCC
- K4H511638B-GCSLASHLB3
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- K4145
- K4108
- K4107
- K4101
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DdatasheetPDF页码索引
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