位置：首页 > IC中文资料 > K4H511638B-UCSLASHLB0
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4H511638B-UCSLASHLB0 | 512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl | Samsung 三星 |   |
更新时间：2025-10-12 12:14:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
SAMSUNG/三星 |
24+ |
TSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
HYNIX/海力士 |
23+ |
FBGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SAMSUNG |
15+ |
SSOP |
11560 |
全新原装,现货库存,长期供应 |
|||
HYNIX/海力士 |
2447 |
FBGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAM |
1316+ |
TSOP54 |
10028 |
只做原厂原装,认准宝芯创配单专家 |
|||
SAMSUNG |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
|||
SAMSUN |
TSOP66 |
1840 |
优势库存 |
||||
24+ |
TSSOP |
265 |
|||||
专营SAMSUNG |
22+ |
MICRON/镁光 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
K4H511638B-UCSLASHLB0芯片相关品牌
K4H511638B-UCSLASHLB0规格书下载地址
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DdatasheetPDF页码索引
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