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IS61WV102416价格
参考价格：￥120.4988
型号：IS61WV102416ALL-20TLI 品牌：ISSI 备注：这里有IS61WV102416多少钱，2025年最近7天走势，今日出价，今日竞价，IS61WV102416批发/采购报价，IS61WV102416行情走势销售排行榜，IS61WV102416报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 |   | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC FEATURES High-speed access time: 10ns, 12ns Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL) Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES High-speed access time: 8ns, 10ns, 20ns High- performance, low power CMOS process Multiple center power and ground pins for greater noise immunity TTL compatible inputs and outputs Single power supply – 1.65V-2.2V VDD (IS61WV102416FALL) – 2.4V-3.6V VDD (IS61/64WV102416FB | ISSI 矽成半导体 | |
IS61WV102416产品属性
- 类型
描述
- 型号
IS61WV102416
- 功能描述
静态随机存取存储器 16M(1Mx16) 20ns Async 静态随机存取存储器
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
TSOP |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ISSI |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
ISSI |
17+ |
. |
6200 |
100%原装正品现货 |
|||
ISSI |
17+ |
TSOP48 |
60000 |
保证进口原装可开17%增值税发票 |
|||
ISSI |
25+ |
TQFP |
20 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI/美国芯成半导体有限公司 |
23+ |
TSOP48 |
5000 |
公司只做原装,可配单 |
|||
ISSI |
24+ |
TSOP |
2000 |
原装现货假一罚十 |
|||
MOT |
23+ |
SOP-20 |
6500 |
全新原装假一赔十 |
|||
25+ |
TSOP48 |
18000 |
原厂直接发货进口原装 |
||||
ISSI |
TSSOP48 |
50000 |
IS61WV102416规格书下载地址
IS61WV102416参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS725
- IS70-48
- IS70-24
- IS70-15
- IS70-12
- IS7000
- IS-70
- IS662X
- IS662
- IS661X
- IS661
- IS660X
- IS660
- IS655A
- IS654A
- IS627
- IS623
- IS622
- IS621
- IS620
- IS61WV25616BLL-10TLI-TR
- IS61WV25616BLL-10TLI
- IS61WV25616BLL-10TL
- IS61WV25616BLL-10KLI
- IS61WV25616BLL-10BLI
- IS61WV20488BLL-10TLI
- IS61WV20488BLL-10MLI
- IS61WV20488BLL>
- IS61WV1288EEBLL-10TLI
- IS61WV1288EEBLL-10HLI
- IS61WV12816EDBLL-10TLI
- IS61WV12816DBLL-10TLI
- IS61WV12816DBLL-10BLI
- IS61WV12816BLL-12TLI
- IS61WV10248EDBLL-10TLI
- IS61WV10248BLL-10TLI
- IS61WV10248BLL-10MLI
- IS61WV102416BLL-10TLI
- IS61WV102416BLL-10MLI
- IS61WV102416ALL-20TLI
- IS61VPS51236A-200TQLI
- IS61VPS25636A-200TQLI
- IS61VPS102436B-250TQLI
- IS61VPS102418A-250TQL
- IS61VF51236A-7.5TQLI
- IS61QDB24M18A-300M3L
- IS61NVP51236-200TQLI
- IS61NVP25636A-200TQLI
- IS61NLP6432A-200TQLI
- IS61NLP51236-200TQLI
- IS61NLP25636A-200TQLI
- IS61NLP25636A-200B3I
- IS61NLP25636A-200B2LI
- IS61NLP25618A-200TQLI
- IS61NLP102418-200TQLI
- IS61NLF12836A-7.5TQLI
- IS61LV6416-8TL-TR
- IS61LV6416-8TL
- IS61LV6416-10TLI
- IS61LV6416-10TL
- IS61C67
- IS611X
- IS611
- IS610X
- IS610
- IS609
- IS608X
- IS608
- IS607X
- IS607
- IS6051
- IS604X
- IS604
- IS6030
- IS6015X
- IS6015
- IS6010X
- IS6010
- IS6005X
- IS6005
IS61WV102416数据表相关新闻
IS62WV51216BLL-55TL
IS62WV51216BLL-55TL
2022-7-1IS62WV12816EBLL-45BLI
IS62WV12816EBLL-45BLI
2021-10-11IS61SF12832-8.5TQ
产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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