型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI产品属性

  • 类型

    描述

  • 型号

    IS61WV102416BLL-10MI

  • 功能描述

    静态随机存取存储器 16M(1Mx16) 8ns 3.3V Async 静态随机存取存储器 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-11-18 11:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2010+
BGA
6000
绝对原装自己现货
ISSI
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ISSI
三年内
BGA
1983
只做原装正品
ISSI
25+
BGA
1770
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI
25+
BGA48
30000
代理全新原装现货,价格优势
ISSI
1923+
BGA
7823
原装进口现货库存专业工厂研究所配单供货
ISSI, Integrated Silicon Solu
23+
48-迷你型BGA9x11
7300
专注配单,只做原装进口现货
ISSI
23+
48-迷你型BGA(9x11)
71890
专业分销产品!原装正品!价格优势!
ISSI
24+
SMD
15600
静态随机存取存储器16M3.3V10ns1Mx16Async静态随机存
ISSI
25+
电联咨询
7800
公司现货,提供拆样技术支持

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