型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI产品属性

  • 类型

    描述

  • 型号

    IS61WV102416BLL-10MI

  • 功能描述

    静态随机存取存储器 16M(1Mx16) 8ns 3.3V Async 静态随机存取存储器 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-9-29 8:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
BGA
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
ISSI Integrated Silicon Soluti
23+
48miniBGA (9x11)
9000
原装正品,支持实单
ISSL
2016+
BGA
6000
只做原装,假一罚十,公司可开17%增值税发票!
ISSI
25+
TFBGA
16000
原装优势绝对有货
ISSI
25+
BGA
1770
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI, Integrated Silicon Solut
21+
48-VFBGA,CSBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
23+
SOP
20000
原厂授权代理分销现货只做原装正迈科技样品支持现货
ISSI
24+
SMD
15600
静态随机存取存储器16M3.3V10ns1Mx16Async静态随机存
ISSI
23+
48-MBGA
65480
ISSI
新年份
BGA
3500
绝对全新原装现货,欢迎来电查询

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