型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416BLL-10MI产品属性

  • 类型

    描述

  • 型号

    IS61WV102416BLL-10MI

  • 功能描述

    静态随机存取存储器 16M(1Mx16) 8ns 3.3V Async 静态随机存取存储器 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2026-2-1 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSL
2016+
BGA
6000
只做原装,假一罚十,公司可开17%增值税发票!
ISSI, Integrated Silicon Solut
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ISSI
1728+
BGA48
8700
只做原装进口,假一罚十
ISSI
三年内
BGA
1983
只做原装正品
ISSI(美国芯成)
2447
TFBGA-48
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI(美国芯成)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ISSI
1923+
BGA
7823
原装进口现货库存专业工厂研究所配单供货
ISSI
24+
SMD
15600
静态随机存取存储器16Mb10ns1Mx16Async静态随机存取存
INTEGRATED SILICON SOLUTIONS (
24+
N/A
2334
原装原装原装
ISSI
23+
48-MBGA
65480

IS61WV102416BLL-10MI芯片相关品牌

IS61WV102416BLL-10MI数据表相关新闻