型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV102416EDBLL-10TLI

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

IS61WV102416EDBLL-10TLI

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC SRAM 16MBIT PARALLEL 48TSOP I 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC SRAM 16MBIT PARALLEL 48TSOP I 集成电路(IC) 存储器

ETC

知名厂家

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

更新时间:2025-12-11 14:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
1919+
TSOP
545
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI/美国芯成半导体有限公司
23+
TSOP48
5000
公司只做原装,可配单
ISSI(美国芯成)
24+
TFBGA48(6x8)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ISSI/芯成
1919+
明嘉莱只做原装正品现货
2510000
TSOP
ISSI/芯成
24+
TSOP
60000
全新原装现货
ISSI
2409+
n/a
100
原装现货真实库存!量大特价!
ISSI
23+
BGA
4500
ISSI存储芯片在售
ISSI, Integrated Silicon Solut
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI/全系列
24+
BGA
9000
只做原装正品 有挂有货 假一赔十

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