IS61WV102416ALL价格

参考价格:¥120.4988

型号:IS61WV102416ALL-20TLI 品牌:ISSI 备注:这里有IS61WV102416ALL多少钱,2025年最近7天走势,今日出价,今日竞价,IS61WV102416ALL批发/采购报价,IS61WV102416ALL行情走势销售排行榜,IS61WV102416ALL报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV102416ALL

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

IS61WV102416ALL

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes Page:21 Pages

ISSI

矽成半导体

IS61WV102416ALL

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes Page:20 Pages

ISSI

矽成半导体

IS61WV102416ALL

High Speed Low Power Asynchronous SRAM

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes Page:21 Pages

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes Page:20 Pages

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 16MBIT PAR 48MINIBGA 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes Page:20 Pages

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes Page:21 Pages

ISSI

矽成半导体

IS61WV102416ALL产品属性

  • 类型

    描述

  • 型号

    IS61WV102416ALL

  • 功能描述

    静态随机存取存储器 16M(1Mx16) 20ns Async 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-12-15 20:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Integrated
20+
原装
65790
原装优势主营型号-可开原型号增税票
ISSI
24+
NA/
3265
原装现货,当天可交货,原型号开票
ISSI
21+
TSOP48
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
ISSI(美国芯成)
2021+
miniBGA-48(9x11)
499
ISSI
24+
TSOP
4500
只做原装正品现货 欢迎来电查询15919825718
INTEGRATE
24+
SMD
5500
长期供应原装现货实单可谈
ISSI
1613+
BGA
53
原装现货
ISSI Integrated Silicon Solut
25+
48-TFBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ISSI
2450+
BGA
8850
只做原装正品假一赔十为客户做到零风险!!
ISSI
25+23+
TSOP48
34887
绝对原装正品全新进口深圳现货

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