位置：首页 > IC中文资料 > IS61WV102416DBLL-10B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV102416DBLL-10B | 1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 |   | |
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
封装/外壳：48-TFBGA 包装：管件 描述：IC SRAM 16MBIT PARALLEL 48TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：48-TFBGA 包装：托盘 描述：IC SRAM 16MBIT PARALLEL 48TFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI(美国芯成) |
24+ |
BGA48(6x8) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI |
18+ |
BGA48 |
192 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
24+ |
48-TFBGA |
30000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ISSI(美国芯成) |
2526+ |
TSOPI-48 |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
ISSI |
19+ |
480 |
原装现货支持BOM配单服务 |
||||
ISSI, Integrated Silicon Solut |
21+ |
90-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ISSI(美国芯成) |
2021+ |
TFBGA-48(6x8) |
499 |
||||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
2405+ |
n/a |
9845 |
十年芯路!诚信赢客户!合作创未来! |
|||
ISSI |
23+ |
48BGA |
9600 |
原装现货 支持实单 |
IS61WV102416DBLL-10B芯片相关品牌
IS61WV102416DBLL-10B规格书下载地址
IS61WV102416DBLL-10B参数引脚图相关
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IS61WV102416DBLL-10B数据表相关新闻
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产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13IS61SF12832-8.5TQ
原装正品 热卖 假一赔十
2020-7-13IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1IS62C256AL-45TLI进口原装假一赔十
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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