位置：首页 > IC中文资料 > IS61WV102416DBLL-10TL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS61WV102416DBLL-10TL | 1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 |   | |
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC SRAM 16MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC SRAM 16MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | | ||
1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D | ISSI 矽成半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI(美国芯成) |
24+ |
TSOP4812.0mm |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ISSI |
18+ |
BGA48 |
192 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
24+ |
48-TFSOP |
30000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ISSI(美国芯成) |
2526+ |
TSOPI-48 |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
ISSI, Integrated Silicon Solut |
21+ |
24-TBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
ISSI(美国芯成) |
2021+ |
TSOPI-48 |
499 |
||||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI, Integrated Silicon Solut |
/ROHS.original |
48-TSOP I |
3812 |
﹤原装元器件﹥现货特价/供应元器件代理经销。欢迎咨 |
|||
ISSI Integrated Silicon Soluti |
22+ |
48TSOP I |
9000 |
原厂渠道,现货配单 |
IS61WV102416DBLL-10TL芯片相关品牌
IS61WV102416DBLL-10TL规格书下载地址
IS61WV102416DBLL-10TL参数引脚图相关
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IS61WV102416DBLL-10TL数据表相关新闻
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产品属性 属性值 搜索类似 制造商: ISSI 产品种类: 静态随机存取存储器 存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
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原装正品 热卖 假一赔十
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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