型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV102416DALL-12TLI

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

ISSI

矽成半导体

1Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V/1.8V SUPPLY

FEATURES • High-speed access time: 10ns, 12ns • High- performance, low power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS# and OE# • TTL compatible inputs and outputs • Single power supply – 1.65V-2.2V VDD (IS61/64WV102416D

ISSI

矽成半导体

更新时间:2025-12-11 11:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
23+
BGA
4500
ISSI存储芯片在售
ISSI(美国芯成)
2447
TFBGA-48(6x8)
315000
480个/托盘一级代理专营品牌!原装正品,优势现货,长
ISSI(美国芯成)
23+
BGA48
8000
只做原装现货
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI(美国芯成)
2021+
TFBGA-48(6x8)
499
ISSI
25+
电联咨询
7800
公司现货,提供拆样技术支持
ISSI Integrated Silicon Soluti
22+
48TFBGA (6x8)
9000
原厂渠道,现货配单
ISSI
24+
48BGA
9000
只做原装正品 有挂有货 假一赔十
ISSI
24+
n/a
25836
新到现货,只做原装进口
ISSI
2405+
n/a
9845
十年芯路!诚信赢客户!合作创未来!

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