型号 功能描述 生产厂家 企业 LOGO 操作
IS61WV102416EDBLL

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

1Mx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 10ns, 12ns  Single power supply – 1.65V-2.2V VDD(IS61/64WV102416EDALL) – 2.4V-3.6V VDD (IS61/64WV102416EDBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indi

ISSI

矽成半导体

封装/外壳:48-TFBGA 包装:散装托盘 描述:IC SRAM 16MBIT PARALLEL 48TFBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 16MBIT PARALLEL 48TFBGA 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes Page:21 Pages

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes Page:20 Pages

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes Page:20 Pages

ISSI

矽成半导体

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes Page:21 Pages

ISSI

矽成半导体

更新时间:2025-12-14 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
N/A
1703
30
ISSI/芯成
1919+
明嘉莱只做原装正品现货
2510000
TSOP
ISSI,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI(美国芯成)
2447
TFBGA-48(6x8)
315000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
ISSI(美国芯成)
25+
TSOPI-48
500000
源自原厂成本,高价回收工厂呆滞
ISSI/芯成
1919+
TSOP
545
原装现货 价格优势
ISSI
1919+
TSOP
545
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
24+
con
10000
查现货到京北通宇商城
ISSI, Integrated Silicon Solut
21+
84-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
23+
BGA
4500
ISSI存储芯片在售

IS61WV102416EDBLL数据表相关新闻