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位置：首页 > IC中文资料第719页 > IRL38

IRL38价格

参考价格：￥9.9688

型号：IRL3803LPBF 品牌：IR 备注：这里有IRL38多少钱，2025年最近7天走势，今日出价，今日竞价，IRL38批发/采购报价，IRL38行情走势销售排行榜，IRL38报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL3803

Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

IRF

IRL3803

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤6mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRL3803L

Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803LPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803LPBF

Advanced Process Technology

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803PBF

IRMOSFET?

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

Infineon

英飞凌

IRL3803S

Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803S

Logic-Level Gate Drive

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803SPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803SPBF

Advanced Process Technology

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803STRL

Logic-Level Gate Drive

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803STRRPBF

Advanced Process Technology

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803V

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRL3803V

N-Channel MOSFET Transistor

• DESCRIPTION • Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤5.5mΩ • Enhancement mode • Fa

ISC

无锡固电

IRL3803VL

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRL3803VPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRL3803VS

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRL3803LPBF

Advanced Process Technology

Infineon

英飞凌

IRL3803PBF

HEXFET짰 Power MOSFET

文件：2.62955 Mbytes Page：9 Pages

IRF

IRL3803PBF

ADVANCED PROCESS TECHNOLOGY

文件：968.26 Kbytes Page：9 Pages

IRF

IRL3803PBF_15

ADVANCED PROCESS TECHNOLOGY

文件：968.26 Kbytes Page：9 Pages

IRF

IRL3803S

N 沟道功率 MOSFET

Infineon

英飞凌

IRL3803SPBF

ADVANCED PROCESS TECHNOLOGY

文件：402.96 Kbytes Page：11 Pages

IRF

IRL3803SPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：402.96 Kbytes Page：11 Pages

IRF

IRL3803V

采用 TO-220AB 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

IRL3803VLPBF

HEXFET Power MOSFET

文件：269.85 Kbytes Page：10 Pages

IRF

IRL3803VPBF

ADVANCED PROCESS TECHNOLOGY

文件：216.25 Kbytes Page：9 Pages

IRF

IRL3803VPBF...

ADVANCED PROCESS TECHNOLOGY

文件：216.25 Kbytes Page：9 Pages

IRF

IRL3803VPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：216.25 Kbytes Page：9 Pages

IRF

IRL3803VS

isc N-Channel MOSFET Transistor

文件：263.04 Kbytes Page：2 Pages

ISC

无锡固电

IRL3803VSPBF

HEXFET Power MOSFET

文件：269.85 Kbytes Page：10 Pages

IRF

IRL3803VSPBF

ADVANCED PROCESS TECHNOLOGY

文件：279 Kbytes Page：11 Pages

IRF

IRL3803VSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：279 Kbytes Page：11 Pages

IRF

IRL38产品属性

  • 类型

    描述

  • 型号

    IRL38

  • 功能描述

    MOSFET N-CH 30V 140A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRL38供应商更多...

更新时间：2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRL3803
IR
24+
NA/
147
优势代理渠道,原装正品,可全系列订货开增值税票
询价
上海意淼电子科技有限公司
IRL3803
IR
23+
TO-220
12000
全新原装假一赔十
询价
深圳市明嘉莱科技有限公司
IRL3803MOS(场效应管)
IR
24+
TO 220
161544
明嘉莱只做原装正品现货
询价
深圳市科恒伟业电子有限公司
IRL3803STRLPBF
IR
24+
TO263
7850
只做原装正品现货或订货假一赔十!
询价
深圳市赛美科科技有限公司
IRL3803
IR
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市赛尔通科技有限公司
IRL3803SPBF
IR
23+
D2-PAK
65400
询价
深圳市星宇佳科技有限公司
IRL3803STRRPBFMOS(场效应管)
83
263
IR
7
92
询价
中天科工半导体（深圳）有限公司
IRL3803LPBF
IR
25+
TO-262
32000
IR全新特价IRL3803LPBF即刻询购立享优惠#长期有货
询价
深圳市福田区绿盛电子商行
IRL3803
IR
2015+
TO-220AB
19889
一级代理原装现货,特价热卖!
询价
深圳市美思瑞电子科技有限公司
IRL3803VS
IR
22+
D2-PAK
9865
原装正品，实单请联系
询价

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IRL38规格书下载地址

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DdatasheetPDF页码索引

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