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IRL3803S中文资料
IRL3803S数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with extrmely efficient and reliable device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Advanced Process Technology
● Surface Mount(IRL3803S)
● Low-profile through-hole(IRL3803L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
IRL3803S产品属性
- 类型
描述
- 型号
IRL3803S
- 功能描述
MOSFET N-CH 30V 140A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO263 |
8600 |
受权代理!全新原装现货特价热卖! |
|||
IR |
16+ |
D2PAK |
6111 |
全新原装/深圳现货库2 |
|||
IR |
23+ |
D2-PAK |
65400 |
||||
INFINEON/英飞凌 |
24+ |
D2PAK |
18401 |
原装进口假一罚十 |
|||
IR |
2021+ |
D2-PAK |
9450 |
原装现货。 |
|||
IR |
24+ |
D2-PAK |
440 |
只做原厂渠道 可追溯货源 |
|||
IR |
22+ |
D2-PAK |
9865 |
原装正品，实单请联系 |
|||
IR |
2021+ |
TO263 |
6800 |
原厂原装,欢迎咨询 |
|||
IR |
24+ |
TO-263 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
Infineon(英飞凌) |
24+ |
D2PAK |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
IRL3803STRLPBF-CUTTAPE 价格
参考价格：￥11.1052
IRL3803S 资料下载更多...
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