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IRL3803V价格
参考价格：￥3.4400
型号：IRL3803VPBF 品牌：INTERNATIONAL 备注：这里有IRL3803V多少钱，2026年最近7天走势，今日出价，今日竞价，IRL3803V批发/采购报价，IRL3803V行情走势销售排行榜，IRL3803V报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRL3803V | HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF |   | |
IRL3803V | N-Channel MOSFET Transistor • DESCRIPTION • Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤5.5mΩ • Enhancement mode • Fa | ISC 无锡固电 | | |
IRL3803V | 采用 TO-220AB 封装的 30V 单 N 通道 HEXFET 功率 MOSFET | INFINEON 英飞凌 | | |
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | | ||
HEXFET Power MOSFET 文件：269.85 Kbytes Page：10 Pages | IRF | | ||
HEXFET Power MOSFET | INFINEON 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：216.25 Kbytes Page：9 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：216.25 Kbytes Page：9 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：216.25 Kbytes Page：9 Pages | IRF | | ||
丝印代码：D2PAK；isc N-Channel MOSFET Transistor 文件：263.04 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
30V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | INFINEON 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：279 Kbytes Page：11 Pages | IRF | | ||
HEXFET Power MOSFET 文件：269.85 Kbytes Page：10 Pages | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：279 Kbytes Page：11 Pages | IRF | | ||
Stereo/dual TV sound decoder circuit 文件：95.94 Kbytes Page：11 Pages | PHILIPS 飞利浦 | | ||
Low-Power BiCMOS Current-Mode PWM 文件：383.98 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Low-Power BiCMOS Current-Mode PWM 文件：383.98 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Low-Power BiCMOS Current-Mode PWM 文件：383.98 Kbytes Page：20 Pages | TI 德州仪器 | | ||
Low-Power BiCMOS Current-Mode PWM 文件：383.98 Kbytes Page：20 Pages | TI 德州仪器 | |
IRL3803V产品属性
- 类型
描述
- 型号
IRL3803V
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
HEXFET Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/IR |
20+ |
TO-220 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IRVISHAY |
24+ |
NA |
9400 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IR |
25+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
IR |
25+ |
TO-220 |
2000 |
原厂原装,价格优势 |
|||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IR |
23+ |
TO-263 |
20894 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
25+23+ |
TO220 |
31054 |
绝对原装正品全新进口深圳现货 |
IRL3803V规格书下载地址
IRL3803V参数引脚图相关
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