IRL3803S价格

参考价格:¥6.1518

型号:IRL3803SPBF 品牌:INTERNATIONAL 备注:这里有IRL3803S多少钱,2025年最近7天走势,今日出价,今日竞价,IRL3803S批发/采购报价,IRL3803S行情走势销售排行榜,IRL3803S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL3803S

Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803S

Logic-Level Gate Drive

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

IRL3803S

N 沟道功率 MOSFET

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

Logic-Level Gate Drive

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

IRF

ADVANCED PROCESS TECHNOLOGY

文件:402.96 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:402.96 Kbytes Page:11 Pages

IRF

8-bit MICROCOMPUTER 38000 Series

文件:310.37 Kbytes Page:26 Pages

RENESAS

瑞萨

SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

文件:1.61927 Mbytes Page:119 Pages

RENESAS

瑞萨

64x32 Flexible RGB LED Matrix - 5mm Pitch

文件:349.29 Kbytes Page:3 Pages

Adafruit

(QzROM version) Standard Characteristics

文件:244.39 Kbytes Page:11 Pages

RENESAS

瑞萨

8-bit MICROCOMPUTER 38000 Series

文件:310.37 Kbytes Page:26 Pages

RENESAS

瑞萨

IRL3803S产品属性

  • 类型

    描述

  • 型号

    IRL3803S

  • 功能描述

    MOSFET N-CH 30V 140A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-20 16:18:00
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IR
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原厂直接发货进口原装
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IR
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全新原装 货期两周
IR
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316
公司优势库存 热卖中!
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100%原装正品现货
IR
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全新原装、诚信经营、公司现货销售

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