Description

Fifth Generation HEXFETs utilize advanced processing

techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are

well known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercialindustrial

applications at power dissipation levels to approximately

50 watts. The low thermal resistance and low package cost of the

TO-220 contribute to its wide acceptance throughout the industry.

 Logic - Level Gate Drive

 Advanced Process Technology

 Ultra Low On-Resistance

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 Fully Avalanche Rated

 Lead-Free