Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A??

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N-Channel MOSFET Transistor

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30V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Logic-Level Gate Drive

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Logic-Level Gate Drive

文件：292.56 Kbytes Page：11 Pages

HEXFET짰 Power MOSFET

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Logic-Level Gate Drive

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N-Channel 30-V (D-S) MOSFET

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NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

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15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件：197.74 Kbytes Page：3 Pages