NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R

带偏置电阻的 NPN 外延硅晶体管

带内置电阻的晶体管由于其减少的零件数量和简化的电路设计，可极大地节约空间和成本。 100 mA 输出电流处理能力\n 内置偏置电阻（R1 = 22 KΩ、R2 = 22 KΩ）;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PREBIAS NPN 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A??

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15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件：197.74 Kbytes Page：3 Pages

15 WATT 48V TO 5V/12V/15V ISOLATED DC-DC CONVERTER

文件：197.74 Kbytes Page：3 Pages