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IRGIB6B60KD价格
参考价格：￥10.4782
型号：IRGIB6B60KDPBF 品牌：International 备注：这里有IRGIB6B60KD多少钱，2026年最近7天走势，今日出价，今日竞价，IRGIB6B60KD批发/采购报价，IRGIB6B60KD行情走势销售排行榜，IRGIB6B60KD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGIB6B60KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien | IRF |   | |
IRGIB6B60KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien | IRF | | |
IRGIB6B60KD | 600V Low-Vceon Copack IGBT in a TO-220 FullPak package | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • R | IRF | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 11A 38W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | ||
封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：IGBT 600V 11A 38W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：314.27 Kbytes Page：12 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：314.27 Kbytes Page：12 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing | IRF | |
IRGIB6B60KD产品属性
- 类型
描述
- 型号
IRGIB6B60KD
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
TO-220F |
47186 |
郑重承诺只做原装进口现货 |
|||
IR |
1107+ |
TO-220 |
1597 |
||||
IR |
17+ |
TO220 |
6200 |
100%原装正品现货 |
|||
IR |
24+ |
NA |
68932 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
Infineon Technologies |
22+ |
TO220AB FullPak |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
TO-220 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
INFINEON/英飞凌 |
24+ |
TO-220F |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
TO-220F |
8000 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO-220 |
7000 |
IRGIB6B60KD规格书下载地址
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