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IRGB6B60K价格
参考价格：￥9.4595
型号：IRGB6B60KDPBF 品牌：INTERNATIONAL 备注：这里有IRGB6B60K多少钱，2025年最近7天走势，今日出价，今日竞价，IRGB6B60K批发/采购报价，IRGB6B60K行情走势销售排行榜，IRGB6B60K报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGB6B60K | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current | IRF |   | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing | IRF | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 13A 90W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 13A 90W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | |
IRGB6B60K产品属性
- 类型
描述
- 型号
IRGB6B60K
- 制造商
International Rectifier
- 功能描述
IGBT TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRGB6B60KDPBF即刻询购立享优惠#长期有货 |
|||
IR |
03+ |
TO-220 |
380 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
IR |
16+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
IR |
25+23+ |
TO-220 |
15105 |
绝对原装正品全新进口深圳现货 |
|||
IR/VISHAY |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
6100 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-220 |
5790 |
只做原装假一赔十 |
|||
IR |
24+ |
TO-220AB |
8866 |
IRGB6B60K芯片相关品牌
IRGB6B60K规格书下载地址
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DdatasheetPDF页码索引
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