IRGB6B60K价格

参考价格:¥9.4595

型号:IRGB6B60KDPBF 品牌:INTERNATIONAL 备注:这里有IRGB6B60K多少钱,2026年最近7天走势,今日出价,今日竞价,IRGB6B60K批发/采购报价,IRGB6B60K行情走势销售排行榜,IRGB6B60K报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRGB6B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current

IRF

IRGB6B60K

600V UltraFast 10-30 kHz IGBT in a TO-220AB package

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing

IRF

600V 超快 10-30 kHz Copack IGBT,采用 TO-220AB 封装

Infineon

英飞凌

封装/外壳:TO-220-3 包装:卷带(TR) 描述:IGBT 600V 13A 90W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

封装/外壳:TO-220-3 包装:卷带(TR) 描述:IGBT 600V 13A 90W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRGB6B60K产品属性

  • 类型

    描述

  • 型号

    IRGB6B60K

  • 制造商

    International Rectifier

  • 功能描述

    IGBT TO-220AB

更新时间:2026-1-3 16:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
47186
郑重承诺只做原装进口现货
IR
24+
N/A
8000
全新原装正品,现货销售
IR
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
IR
25+23+
TO-220
15105
绝对原装正品全新进口深圳现货
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
24+
TO-220
5790
只做原装假一赔十
IR
2023+
TO-220AB
50000
原装现货
INFINEON
24+
con
10
现货常备产品原装可到京北通宇商城查价格
IR
24+
TO-220-3
292
INFINEON/英飞凌
17+
TO-220
5790
原装现货

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