IRGB6B60KDPBF价格

参考价格:¥9.4595

型号:IRGB6B60KDPBF 品牌:INTERNATIONAL 备注:这里有IRGB6B60KDPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRGB6B60KDPBF批发/采购报价,IRGB6B60KDPBF行情走势销售排行榜,IRGB6B60KDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRGB6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

IRGB6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

IRGB6B60KDPBF

封装/外壳:TO-220-3 包装:卷带(TR) 描述:IGBT 600V 13A 90W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing

IRF

IRGB6B60KDPBF产品属性

  • 类型

    描述

  • 型号

    IRGB6B60KDPBF

  • 功能描述

    IGBT 晶体管 600V UltraFast 10-30kHz

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-12-24 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220-3
234
IR
24+
N/A
8000
全新原装正品,现货销售
INFINEON/英飞凌
17+
TO-220
5790
原装现货
INFINEON/英飞凌
2023+
TO-220
6100
专注全新正品,优势现货供应
Infineon
24+
NA
3250
进口原装正品优势供应
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRGB6B60KDPBF即刻询购立享优惠#长期有货
IR
23+
TO-263
8650
受权代理!全新原装现货特价热卖!
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
INFINEON
23+
TO-220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术

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