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IRGB6B60KDPBF价格
参考价格：￥9.4595
型号：IRGB6B60KDPBF 品牌：INTERNATIONAL 备注：这里有IRGB6B60KDPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRGB6B60KDPBF批发/采购报价，IRGB6B60KDPBF行情走势销售排行榜，IRGB6B60KDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGB6B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF |   | |
IRGB6B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | |
IRGB6B60KDPBF | 封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 13A 90W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing | IRF | |
IRGB6B60KDPBF产品属性
- 类型
描述
- 型号
IRGB6B60KDPBF
- 功能描述
IGBT 晶体管 600V UltraFast 10-30kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
7138 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
16+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
2450+ |
TO-220 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
6100 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-220 |
5790 |
只做原装假一赔十 |
|||
IR |
24+ |
TO-220-3 |
234 |
||||
IR |
24+ |
TO-220 |
47186 |
郑重承诺只做原装进口现货 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
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IRGB6B60KDPBF规格书下载地址
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DdatasheetPDF页码索引
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